SHINDENGEN
2SK3013
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
(FP16W60VX2)
600V 16A
Case : E-pack
VX-2 Series Power MOSFET
N-Channel Enhancement type
(Unit : mm)
Case : ITO-3P
Switching power supply of
AC 100-200V input
Inverter
Power Factor Control Circuit
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.
FEATURES
Absolute Maximum Ratings Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
30
Continuous Drain CurrentDC
I
D
16
Continuous Drain CurrentPeak)
I
DP
48
A
Continuous Source CurrentDC
I
S
16
Total Power Dissipation
P
T
70
W
Single Pulse Avalanche Current
I
AS
Tch = 25
16
A
Dielectric Strength
Vdis
Terminals to case, AC 1 minute
2
kV
Mounting Torque
TOR
(Recommended torque : 0.5Nm
0.8
Nm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK3013 ( FP16W60VX2 )
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
600
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 30V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 8A, V
DS
= 10V
6.2
10.0
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 8A, V
GS
= 10V
0.45
0.6
Gate Threshold Voltage
V
TH
I
D
= 1mA, V
DS
= 10V
2.5
3
3.5
V
Source-Drain Diode Forward Voltage
V
SD
I
S
= 8A, V
GS
= 0V
1.5
Thermal Resistance
jc
junction to case
1.78 /
Total Gate Charge
Qg
V
GS
= 10V, I
D
= 16A, V
DD
= 400V
85
nC
Input Capacitance
C
iss
2300
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
180
pF
Output Capacitance
C
oss
480
Turn-On Time
t
on
I
D
= 8A, V
GS
= 10V, R
L
= 19
130
280
ns
Turn-Off Time
t
off
260
500
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