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Электронный компонент: D1UB80

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800V 1A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
SHINDENGEN
Case : SOP-4
D1UB80
Unit : mm
General Purpose Rectifiers
SMT Bridges
Absolute Maximum Ratings (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
800
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load, Ta=25
1
A
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
30
A
Current Squared Time
I
2
t
1mst10ms Tj=25
3
A
2
s
Electrical Characteristics (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=0.4A, Pulse measurement, Rating of per diode
Max.0.95
V
Reverse Current
I
R
V
R
=800v,
Pulse measurement, Rating of per diode
Max.10
A
Thermal Resistance
jl
junction to lead Without heatsink
Max.25
/W
ja
junction to ambient Without heatsink
Max.62.5
Forward Voltage
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
1
10
D1UB80
Pulse measurement per diode
Tl=150
C [TYP]
Tl=25
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
D1UB80
Forward Power Dissipation
SIN
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
Tj = 150
C
Sine wave
0
t
p
I
O
T
D=t
p
/T
0
20
40
60
80
100
120
140
160
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
D1UB80
Derating Curve
V
R
= V
RM
SIN
0
V
R
Ambient Temperature Ta [
C]
Average Rectified Forward Current I
O
[A]
Alumina substrate
50.8mm
2
Soldering land 1mm
Conductor layer 20
m
Substrate thickness 0.64mm
0
t
p
I
O
T
D=t
p
/T
0
20
40
60
80
100
120
140
160
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
D1UB80
Derating Curve
V
R
= V
RM
SIN
0
V
R
Lead Temperature Tl [
C]
Average Rectified Forward Current I
O
[A]