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Электронный компонент: D2SB80A

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800V 2A
Copyright & Copy;2002 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
SHINDENGEN
Case : 2S
Unit : mm
D2SB80A
General Purpose Rectifiers
SIL Bridges
Absolute Maximum Ratings (If not specified, Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40 to 150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
800
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load Tl=115
2.0
A
50Hz sine wave, R-load Ta=25
1.5
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25
120
A
Current Squared Time
I
2
t
1mst10ms@Tj=25 per diode
60
A
2
s
Electrical Characteristics (If not specified, Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=1A, Pulse measurement, Rating of per diode
Max.0.95
V
Reverse Current
I
R
V
R
=800V,
Pulse measurement, Rating of per diode
Max.10
A
Thermal Resistance
jl
junction to lead
Max.10
/W
ja
junction to ambient
Max.47
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
1
10
50
20
5
0.2
0.5
D2SB80A
Tl=150C [TYP]
Tl= 25C [TYP]
2
Forward Voltage
Pulse measurement per diode
I
F
[A]
F
o
rw
a
r
d
Cu
rre
n
t
Forward Voltage
V
F
[V]
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
SIN
D2SB80A
Tj =150C
sine wave
I
O
[A]
Average Rectified Forward Current
P
F
[W
]
F
o
rw
a
r
d
P
o
w
e
r Dis
s
i
p
a
t
i
o
n
Forward Power Dissipation
0
50
100
150
200
1
10
100
D2SB80A
Peak Surge Forward Capability
Number of Cycles [cycle]
P
eak
S
u
r
g
e F
o
r
w
ar
d
C
u
r
r
e
n
t
I
FS
M
[A]
I
FS
M
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=125C before
surge current is applied
0
20
40
60
80
100
120
140
160
0
0.5
1
1.5
2
SIN
D2SB80A
Derating Curve
I
O
[A]
A
v
er
ag
e R
e
c
t
i
f
i
e
d
F
o
r
w
ar
d
C
u
r
r
e
n
t
Ta [C]
Ambient Temperature
sine wave
R - load
free in air
PCB
Glass-epoxy substrate
Soldering land 5mm phi