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Электронный компонент: D4SB60L

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D4SB60L
600V 4A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
(Unit : mm)
RATINGS
SHINDENGEN
Case : 3S
General Purpose Rectifiers
SIL Bridges
Absolute Maximum Ratings If not specified Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40150
Operating Junction Temperature
T
j
150
Maximum Reverse Voltage
V
RM
600
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load With heatsink Tc=111
4
A
50Hz sine wave, R-load Without heatsink Ta=25
2.5
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25
150
A
Current Squared Time
I
2
t
2mst10msj = 25
80
A
2
s
Dielectric Strength
Vdis
Terminals to case, AC 1 minute
2
kV
Mounting Torque
TOR
Recommended torque : 0.5Nm
0.8
Nm
Electrical Characteristics If not specified Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=2A, Pulse measurement, Rating of per diode
Max.0.95
V
Reverse Current
I
R
V
R
=V
RM
, Pulse measurement, Rating of per diode
Max.10
A
Reverse Recovery Time
t
rr
I
F
=0.1A, I
R
=0.1A, Rating of per diode
Max.10
s
jc
junction to case With heatsink
Max.5.5
Thermal Resistance
jl
junction to lead Without heatsink
Max.6
/W
ja
junction to ambient Without heatsink
Max.30
Forward Voltage
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
1
10
D4SB60L
Pulse measurement per diode
Tc=150
C [TYP]
Tc=25
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
0
2
4
6
8
10
0
1
2
3
4
5
6
D4SB60L
Forward Power Dissipation
SIN
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
Tj = 150
C
Sine wave
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
D4SB60L
Derating Curve
SIN
Tc
Tc
Heatsink
Case Temperature Tc [
C]
Average Rectified Forward Current I
O
[A]
Sine wave
R-load
with heatsink
0
t
p
I
O
T
D=t
p
/T
0
20
40
60
80
100
120
140
160
0
0.5
1
1.5
2
2.5
3
3.5
4
D4SB60L
Derating Curve
V
R
= 600V
SIN
0
V
R
PCB
Ambient Temperature Ta [
C]
Average Rectified Forward Current I
O
[A]
Soldering land 5mm