ChipFind - документация

Электронный компонент: D4SBL40

Скачать:  PDF   ZIP
D4SBL40
D4SBL40
400V 4A
400V 4A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
OUTLINE DIMENSIONS
(Unit : mm)
(Unit : mm)
RATINGS
RATINGS
SHINDENGEN
SHINDENGEN
Switching power supply
Switching power supply
Home (Electrical) Appliances
Home (Electrical) Appliances
Office Equipment, Telecommunication,
Office Equipment, Telecommunication,
Factory Automation
Factory Automation
APPLICATION
APPLICATION
Low noise
Low noise
SIL Package
SIL Package
High IFSM
High IFSM
FEATURES
FEATURES
Case : 3S
Case : 3S
Super Fast Recovery Rectifiers
Super Fast Recovery Rectifiers

Super Fast Bridges
Super Fast Bridges
Absolute Maximum Ratings (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
400
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load With heatsink Tc=91
4
A
50Hz sine wave, R-load Without heatsink Ta=25
1.95
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25
50
A
Dielectric Strength
Vdis
Terminals to case, AC 1 minute
2
kV
Mounting Torque
TOR
Recommended torque
0.5Nm
0.8
Nm
Electrical Characteristics (If not specified Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=2.5A, Pulse measurement, Rating of per diode
Max.1.3
V
Reverse Current
I
R
V
R
=V
RM
,
Pulse measurement, Rating of per diode
Max.10
A
Reverse Recovery Time
trr
I
F
= 0.5A, I
R
= 1A
Max.50
ns
jc
junction to case With heatsink
Max.5.5
Thermal Resistance
jl
junction to lead Without heatsink
Max.6
/W
ja
junction to ambient Without heatsink
Max.30
Forward Voltage
0.1
1
10
0
0.5
1
1.5
2
2.5
3
D4SBL40
Tc=150
C [MAX]
Tc=25
C [MAX]
Pulse measurement per diode
Tc=150
C [TYP]
Tc=25
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
1
10
100
D4SBL40
1
10
100
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Junction Capacitance
Reverse Voltage V
R
[V]
Junction Capacitance Cj [pF]
f=1MHz
Tc=25
C
TYP
per diode
0
t
p
I
O
T
D=t
p
/T
0
2
4
6
8
10
12
14
16
0
1
2
3
4
5
6
7
D4SBL40
0.3
Forward Power Dissipation
Tj = 150
C
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
0
t
p
I
O
T
D=t
p
/T
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
160
D4SBL40
0.3
Derating Curve
V
R
= V
RM
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
0
V
R
Tc
Tc
Heatsink
Case Temperature Tc [
C]
Average Rectified Forward Current I
O
[A]
0
t
p
I
O
T
D=t
p
/T
0
V
R
0
0.5
1
1.5
2
2.5
3
0
20
40
60
80
100
120
140
160
D4SBL40
0.3
Derating Curve
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
Ambient Temperature Ta [
C]
Average Rectified Forward Current I
O
[A]
V
R
= V
RM
Sine wave
R-load
Free in air
Glass-epoxy substrate
Soldering land 5mm
Peak Surge Forward Capability
0
10
20
30
40
50
60
70
80
1
10
100
D4SBL40
2
5
20
50
I
FSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current I
FSM
[A]
non-repetitive,
sine wave,
Tj=25
C before
surge current is applied