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Электронный компонент: D4SBS6

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D4SBS6
60V 4A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
(Unit : mm)
RATINGS
SHINDENGEN
Switching power supply
Home Appliances, Office Equipment
Telecommunication, Factory Automation
APPLICATION
Thin Single In-Line Package
SBD Bridge
Low V
F
FEATURES
Case : 3S
Schottky Rectifiers (SBD)
SBD Bridges
Absolute Maximum Ratings (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
60
V
Repetitive Peak Surge Reverse Voltage
V
RRSM
Pulse width 0.5ms, duty 1/40
65
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load With heatsink Tc=114
4
A
50Hz sine wave, R-load Without heatsink Ta=46
2.3
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25
60
A
Repetitive Peak Surge Reverse Power
P
RRSM
Pulse width 10s, Rating of per diode, Tj=25
330
W
Dielectric Strength
Vdis
Terminals to case, AC 1 minute
2
kV
Mounting Torque
TOR
Recommended torque
0.5Nm
0.8
Nm
Electrical Characteristics (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=2A, Pulse measurement, Rating of per diode
Max.0.62
V
Reverse Current
I
R
V
R
=V
RM
,
Pulse measurement, Rating of per diode
Max.2
mA
Junction Capacitance
Cj
f=1MHz, VR=10V, Rating of per diode
TYP 180
pF
jc
junction to case With heatsink
Max.5.5
Thermal Resistance
jl
junction to lead Without heatsink
Max.6
/W
ja
junction to ambient Without heatsink
Max.30
Forward Voltage
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
1
10
D4SBS6
Tc=150
C [MAX]
Tc=25
C [MAX]
Pulse measurement per diode
Tc=150
C [TYP]
Tc=25
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
Junction Capacitance
10
100
1000
D4SBS6
0.1
1
10
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Reverse Voltage V
R
[V]
Junction Capacitance Cj [pF]
f=1MHz
Tc=25
C
TYP
per diode
Reverse Current
0.01
0.1
1
10
100
1000
0
10
20
30
40
50
60
D4SBS6
Tc=150
C [MAX]
Tc=150
C [TYP]
Pulse measurement per diode
Tc=125
C [TYP]
Tc=100
C [TYP]
Tc=75
C [TYP]
Reverse Voltage V
R
[V]
Reverse Current I
R
[mA]
0
5
10
15
20
0
10
20
30
40
50
60
70
D4SBS6
0.3
Reverse Power Dissipation
Tj = 150
C
SIN
0.2
0.5
D=0.05
DC
0.1
0.8
Reverse Voltage V
R
[V]
Reverse Power Dissipation P
R
[W]
0
t
p
V
R
T
D=t
p
/T
0
t
p
I
O
T
D=t
p
/T
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
D4SBS6
0.3
Forward Power Dissipation
Tj = 150
C
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
80
90
100
110
120
130
140
150
160
0
1
2
3
4
5
6
7
8
D4SBS6
0.3
Derating Curve
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
Tc
Tc
Heatsink
Case Temperature Tc [
C]
Average Rectified Forward Current I
O
[A]
Sine wave
R-load
with heatsink
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
D4SBS6
0.3
Derating Curve
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
PCB
Ambient Temperature Ta [
C]
Average Rectified Forward Current I
O
[A]
Glass-epoxy substrate
Soldering land 5mm
Sine wave
R-load
Free in air
Peak Surge Forward Capability
0
20
40
60
80
100
1
10
100
D4SBS6
2
5
20
50
I
FSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current I
FSM
[A]
non-repetitive,
sine wave,
Tj=125
C before
surge current is applied
t
p
I
RP
0
V
R
0.5I
RP
V
RP
I
R
P
RRSM
= I
RP
V
RP
0
20
40
60
80
100
120
0
50
100
150
SBD
Repetitive Surge Reverse Power Derating Curve
Junction Temperature Tj [
C]
P
RRSM
Derating [%]
0.1
1
10
1
10
100
SBD
Repetitive Surge Reverse Power Capability
Pulse Width t
p
[
s]
P
RRSM
(t
p
) / P
RRSM
(t
p
=10
s) Ratio
t
p
I
RP
0
V
R
0.5I
RP
V
RP
I
R
P
RRSM
= I
RP
V
RP