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Электронный компонент: DG1H3

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DG1H3
30V 1A
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
OUTLINE DIMENSIONS
Unit : mm
RATINGS
SHINDENGEN
Case : G1F
Single
Schottky Rectifiers (SBD)
Absolute Maximum Ratings iTl=25 unless otherwise specified)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55 to 125
Operating Junction Temperature
Tj
125
Maximum Reverse Voltage
V
RM
30
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load, Ta = 26, *1
0.7
A
I
O
50Hz sine wave, R-load, Tl = 113, *3
1.0
A
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
20
A
Electrical Characteristics iTl=25 unless otherwise specified)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=0.2A, Pulse measurement
Max 0.30
V
V
F
I
F
=0.7A, Pulse measurement
Max 0.36
V
Reverse Current
I
R
V
R
=V
RM,
Pulse measurement
Max 1
mA
Junction Capacitance
Cj
f=1MHz, V
R
=10V
Typ 37
pF
ja
junction to ambient, *1
Max 210
Thermal Resistance
ja
junction to ambient, *2
Max 120
/W
ja
junction to ambient, *3
Max 70
jl
junction to lead, *3
Max 20
*1
Measured on the 11 inch phenol substrate (pattern area : 32.6mm
2
)
*2
Measured on the 11 inch phenol substrate (pattern area : 160mm
2
)
*3
Measured on the 22 inch alumina substrate (pattern area : 2100mm
2
)
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0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
DG1H3
Tl=125C [MAX]
Tl=125C [TYP]
Tl= 25C [MAX]
Tl= 25C [TYP]
0.2
0.5
2
5
Forward Voltage
Forward Voltage
I
F
[A]
F
o
rw
a
r
d
Cu
rre
n
t
V
F
[V]
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0
5
10
15
20
25
30
35
40
0.01
0.1
1
10
100
DG1H3
Tl=125C [TYP]
Tl=100C [TYP]
Tl=75C [TYP]
Tl=50C [TYP]
Tl=25C [TYP]
Reverse Voltage
V
R
[V]
I
R
[m
A]
Re
v
e
rs
e
Cu
rre
n
t
Reverse Current
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0
0.1
0.2
0.3
0.4
0.5
0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
DG1H3
Tj =125C
0
t
p
I
O
T
D=t
p
/T
I
O
[A]
Average Rectified Forward Current
P
F
[W
]
F
o
rw
a
r
d
P
o
w
e
r Dis
s
i
p
a
t
i
o
n
Forward Power Dissipation
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0
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
30
35
DC
D=0.05
0.1
0.2
0.3
0.5
SIN
0.8
DG1H3
Tj =125C
0
t
p
V
R
T
D=t
p
/T
V
R
[V]
Reverse Voltage
Re
v
e
rs
e
P
o
w
e
r Dis
s
i
p
a
t
i
o
n
P
R
[W
]
Reverse Power Dissipation
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0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
1.2
1.4
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
DG1H3
V
R
= 15V
0
t
p
I
O
T
D=t
p
/T
0
V
R
Ta [C]
Ambient Temperature
I
O
[A]
A
v
er
ag
e R
e
c
t
i
f
i
e
d
F
o
r
w
ar
d
C
u
r
r
e
n
t
Derating Curve
substrate
Glass-epoxy substrate
Soldering 1.2mm x 1.2mm
Conductor layer 35 m
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0
20
40
60
80
100
120
140
0
0.5
1
1.5
2
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
DG1H3
V
R
= 15V
substrate
Alumina substrate
Soldering 1.2mm x 1.2mm
Conductor layer 35 m
0
t
p
I
O
T
D=t
p
/T
0
V
R
Tl [C]
Ambient Temperature
I
O
[A]
A
v
er
ag
e R
e
c
t
i
f
i
e
d
F
o
r
w
ar
d
C
u
r
r
e
n
t
Derating Curve
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0
5
10
15
20
25
30
1
10
DG1H3
2
5
20
50
Peak Surge Forward Capability
I
FS
M
[A]
P
eak
S
u
r
g
e F
o
r
w
ar
d
C
u
r
r
e
n
t
Number of Cycles [cycle]
I
FS
M
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=25C before
surge current is applied
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10
100
1000
0.1
1
10
DG1H3
0.2
0.5
2
5
20
30
Junction Capacitance
Cj [
p
F]
J
unc
t
i
o
n
C
a
pa
c
i
t
a
nc
e
Reverse Voltage
V
R
[V]
f=1MHz
Tl=25C
TYP