ChipFind - документация

Электронный компонент: G1VA10C

Скачать:  PDF   ZIP
Copyright & Copy;2003 Shindengen Electric Mfg.Co., Ltd.
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
(Unit : mm)
Sidac
G1V(A)10C
Case : AX06
Absolute Maximum Ratings iUnless otherwise specified, Tl=25j
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40`125
Operating Junction Temperature
Tj
125
Maximum Off-state Voltage
V
DRM(A)
90
V
RMS On-state Current
I
T
Tl = 98, 50Hz Sine wave ( = 180)
1
A
Pulse On-state Current
I
TRM
Ta = 25 , Pulse width 10s, 60 Hz Sine wave
80
A
Critical Rate of Rise of On-state Current
di
T
/dt
80
A/s
Electrical Characteristics iUnless otherwise specified, Tl=25j
Item
Symbol
Conditions
Ratings
Unit
Breakover Voltage
V
BO(A)
Pulse measurement (dv/dt = 4V/ms)
Min 95
V
Max 110
Off-state Current
I
DRM(A)
V
D
= V
DRM(A)
Max 10
A
Breakover Current
I
BO(A)
Max 0.5
mA
Holding Current
I
H(A)
Max 60
mA
I
H(K)
On-state Voltage
V
T(A)
I
T
= 1A
Max 1.5
V
V
T(K)
I
T
= 1A
Switching Resistance
R
S(A)
Min 0.1
k
Thermal Resistance
jl
Junction to lead
Max 20
/W
0.4
0.6
0.8
1
1.2
1.4
1.6
1
10
G1V(A)10C
TYP
Pulse test
Tl=125C[TYP]
Tl= 25C[TYP]
On-State Voltage - On-State Current
On-State Voltage V
T
[V]
On
-
S
ta
te
C
u
r
r
e
n
t
I
T
[A]
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-40
-20
0
20
40
60
80
100
120
G1V(A)10C
TYP
Pulse test
Peak hold method
Break Over Voltage - Junction Temperature
R
a
ti
o
o
f
V
BO
(
T
j

C
)
/ V
BO
(
25
C
)
Tj [C]
Junction Temperature
0
0.5
1
1.5
2
2.5
3
-40
-20
0
20
40
60
80
100
120
G1V(A)10C
TYP
Pulse test
Junction Temperature
R
a
ti
o
o
f
I
H
(
T
j

C
)
/ I
H
(
25
C
)
Tj [C]
Holding Current - Junction Temperature
10
100
1000
10
100
f=30Hz
G1V(A)10C
200
Ta=25C
200
500
diT / dt limit line
Ta=70C
2
5
20
50
Pulse On-state Current Rating
to
1/f
Ip
0
Current Wave Form
to [ s]
Pulse Base Width
I
TP
[A]
Pu
l
s
e
On
-
s
ta
te
C
u
r
r
e
n
t
(
p
e
a
k
v
a
l
u
e
)