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Электронный компонент: K2564

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SHINDENGEN
2SK2564
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
(F8F60VX2)
600V 8A
Case : E-pack
VX-2 Series Power MOSFET
N-Channel Enhancement type
(Unit : mm)
Case : FTO-220
Switching power supply of
AC 100-200V input
Inverter
Power Factor Control Circuit
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.
FEATURES
Absolute Maximum Ratings
Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
30
Continuous Drain Current
DC
I
D
8
Continuous Drain Current
Peak)
I
DP
24
A
Continuous Source Current
DC
I
S
8
Total Power Dissipation
P
T
50
W
Single Pulse Avalanche Current
I
AS
T
ch
= 25
8
A
Dielectric Strength
V
dis
Terminals to case, AC 1 minute
2
kV
Mounting Torque
TOR
Recommended torque : 0.3Nm
0.5
N
m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2564 ( F8F60VX2 )
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
600
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 30V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 4A, V
DS
= 10V
2.4
5.5
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 4A, V
GS
= 10V
0.9
1.2
Gate Threshold Voltage
V
TH
I
D
= 1mA, V
DS
= 10V
2.5
3.0
3.5
V
Source-Drain Diode Forwade Voltage
V
SD
I
S
= 4A, V
GS
= 0V
1.5
Themal Resistance
jc
junction to case
2.5
/
Total Gate Charge
Q
g
V
DD
= 400V, V
GS
= 10V, I
D
= 8A
42
nC
Input Capacitance
C
iss
1130
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
85
pF
Output Capacitance
C
oss
245
Turn-On Time
t
on
I
D
= 4A, R
L
= 37.5, V
GS
= 10V
55
80
ns
Turn-Off Time
t
off
195
290
0
4
8
12
16
20
24
0
5
10
15
20
2SK2564
Transfer Characteristics
V
DS
= 25V
pulse test
TYP
Tc =
-
55
C
25
C
100
C
150
C
Gate-Source Voltage V
GS
[V]
Drain Current I
D
[A]
Static Drain-Source On-state Resistance
0.1
1
10
-50
0
50
100
150
2SK2564
V
GS
= 10V
pulse test
TYP
I
D
= 4A
Case Temperature Tc [
C]
Static Drain-Source On-state Resistance R
DS(ON)
[
]
Gate Threshold Voltage
0
1
2
3
4
5
6
-50
0
50
100
150
2SK2564
V
DS
= 10V
I
D
= 1mA
TYP
Case Temperature Tc [
C]
Gate Threshold Voltage V
TH
[V]