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Электронный компонент: KP4N12

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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
(Unit : mm)
SMD
TSS KP Series
KP4N12
Case : 2F
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40125
Junction Temperature
Tj
125
Maximum Off-State Voltage
V
DRM
100
V
10/1000s, Non-repetitive
40
Surge On-State Current
I
TSM
10/200s, Non-repetitive
60
A
8/20s, Non-repetitive
150
Electrical Characteristics (Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Breakover Voltage
V
BO
Pulse measurement (Peak hold)
Min 110
V
Off-State Current
I
DRM
V
D
= V
DRM
Max 10
A
Holding Current
I
H
Pulse measurement
Min 100
mA
On-State Voltage
V
T
I
T
= 2A
TYP 1.25
V
Junction Capacitance
Cj
f = 1kHz
Max 50
pF
OSC = 1V, V
D
= 50V
Clamping Voltage
V
CL
dv/dt = 100V/s
Max 135
V
1
10
100
0
1
2
3
4
5
6
7
KP4N12
Pulse measurement
TYP
On-State Voltage V
T
[V]
On-State Current I
T
[A]
On-State Voltage - On-State Current
Breakover Voltage - Junction Temperature
0.8
0.85
0.9
0.95
1
1.05
1.1
KP4N12
-40
0
40
80
120
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
TYP
Pulse test
Peak hold method
Junction Temperature Tj [
C]
Breakover Voltage Ratio V
BO
(T) / V
BO
(Tj=25
C)
Holding Current - Junction Temperature
0
0.5
1
1.5
2
2.5
3
KP4N12
-40
0
40
80
120
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
TYP
Pulse test
Junction Temperature Tj [
C]
Holding Current I
H
(Tj) / I
H
(Tj=25
C)
Junction Capacitance
10
100
1000
KP4N12
1
10
100
1000
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
TYP
V
D
= 0V
V
D
= 50V
Frequency f [kHz]
Junction Capacitance Cj [pF]
Junction Capacitance
10
100
1000
KP4N12
0.1
1
10
100
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
TYP
f = 1kHz
Off-State Applied Voltage V
D
[V]
Junction Capacitance Cj [pF]