ChipFind - документация

Электронный компонент: M1FE40

Скачать:  PDF   ZIP
M1FE40
400V 1A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
SHINDENGEN
Case : M1F
Unit : mm
Absolute Maximum Ratings (If not specified Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
400
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load Ta=25 On glass-epoxy substrate
1.0
A
50Hz sine wave, R-load Tc=103
2.0
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
25
A
Electrical Characteristics (If not specified Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
IF=1A, Pulse measurement
Max.1.1
V
Reverse Current
I
R
V
R
=V
RM
, Pulse measurement
Max.10
A
jl
junction to lead
Max.20
Thermal Resistance
ja
junction to ambient, On glass-epoxy substrate
Max.80
/W
jc
junction to case
Max.18
General Purpose Rectifiers
Single
Forward Voltage
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
1
10
M1FE40
Tl=150
C [MAX]
Tl=25
C [MAX]
Pulse measurement per diode
Tl=150
C [TYP]
Tl=25
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.2
0.4
0.6
0.8
1
1.2
M1FE40
Forward Power Dissipation
SIN
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
Tj = 150
C
Sine wave
0
t
p
I
O
T
D=t
p
/T
0
20
40
60
80
100
120
140
160
0
0.5
1
1.5
2
2.5
3
M1FE40
Derating Curve
V
R
= V
RM
SIN
0
V
R
Case Temperature Tc [
C]
Average Rectified Forward Current I
O
[A]
0
t
p
I
O
T
D=t
p
/T
0
20
40
60
80
100
120
140
160
0
0.5
1
1.5
M1FE40
Derating Curve
V
R
= V
RM
SIN
0
V
R
Ambient Temperature Ta [
C]
Average Rectified Forward Current I
O
[A]
2-inch glass-epoxy substrate
Soldering land 2mm
Conductor layer 35
m