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Электронный компонент: M1FL40

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M1FL40
400V 1.5A
Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
SHINDENGEN
Small SMT
Low noise
trr50ns
FEATURES
APPLICATION
Switching power supply
DC/DC converter
Fry Wheel
Home Appliances, Office Equipment
Telecommunication, Factory Automation
Super Fast Recovery Rectifiers
Single
Absolute Maximum Ratings (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55`150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
400
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load, Tc=104
1.5A
50Hz sine wave, R-load, Ta=25 On glass-epoxy substrate
1.0
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
25A
Electrical Characteristics (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
= 1A, Pulse measurement
Max 1.3
V
Reverse Current
I
R
V
R
= V
RM
, Pulse measurement
Max 10
A
Reverse Recovery Time
trr
I
F
= 0.5A,@ I
R
= 1.0A
Max 50
ns
Junction Capacitance
Cj
f = 1MHz, V
R
= 10V
TYP 9
pF
jc
junction to case
Max 18
Thermal Resistance
jl
junction to lead
Max 20
/W
ja
junction to ambient On glass-epoxy substrate
Max 80
0
0.5
1
1.5
2
2.5
3
0.01
0.1
1
10
M1FL40
Tc=150C [MAX]
Tc=150C [TYP]
Tc= 25C [MAX]
Tc= 25C [TYP]
0.02
0.05
0.2
0.5
2
5
Forward Voltage
Pulse measurement per diode
Forward Voltage
V
F
[V]
I
F
[A]
Forw
ard Current
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
M1FL40
Forward Power Dissipation
I
O
[A]
Average Rectified Forward Current
P
F
[W
]
Forw
ard Pow
e
r Dissipation
0
t
p
I
O
T
D=t
p
/T
Tj = 150C
0
20
40
60
80
100
120
140
160
0
0.5
1
1.5
2
2.5
3
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
M1FL40
V
R
= V
RM
Tc [C]
Case Temperature
I
O
[A]
Av
erage Rectified Forw
ard Current
Derating Curve
0
t
p
I
O
T
D=t
p
/T
0
V
R
0
20
40
60
80
100
120
140
160
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
M1FL40
V
R
= V
RM
Derating Curve
I
O
[A]
Av
erage Rectified Forw
ard Current
Ta [C]
Ambient Temperature
0
t
p
I
O
T
D=t
p
/T
0
V
R
Glass-epoxy substrate
Conductor layer 35um