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Электронный компонент: M2FM3

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M2FM3
30V 6A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
SHINDENGEN
Single
Schottky Rectifiers (SBD)
Absolute Maximum Ratings (Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55`150
Operating Junction Temperature
T
j
150
Maximum Reverse Voltage
V
RM
30
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load Ta=25 On glass-epoxy substrate
4.3
A
50Hz sine wave, R-load Tc=99
6.0
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
120
A
Electrical Characteristics Tc=25
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F1
I
F
=2.0A, Pulse measurement
Max.0.40
V
V
F2
I
F
=6.0A, Pulse measurement
Max.0.46
Reverse Current
I
R
V
R
=V
RM
, Pulse measurement
Max.0.2
mA
Junction Capacitance
Cj
f=1MHz, V
R
=10V
Typ.240
pF
jc
junction to case
Max.14
Thermal Resistance
jl
junction to lead
Max.16
/W
ja
junction to ambient On glass-epoxy substrate
Max.55
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
1
10
M2FM3
Tc=150C [MAX]
Tc=150C [TYP]
Tc= 25C [MAX]
Tc= 25C [TYP]
50
20
5
2
0.5
0.2
Forward Voltage
Forw
ard Current I
F
[A]
Forward Voltage V
F
[V]
Pulse measurement per diode
0
1
2
3
4
5
0
2
4
6
8
10
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
M2FM3
Tj = 150C
0
t
p
I
O
T
D=t
p
/T
Forward Power Dissipation
Forw
ard Pow
e
r Dissipation P
F
[W
]
Average Rectified Forward Current I
O
[A]
0
20
40
60
80
100
120
140
1
10
100
M2FM3
2
5
20
50
I
FSM
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=25C before
surge current is applied
Peak Surge Forward Capability
Peak Surge Forw
ard Current I
FSM
[A]
Number of Cycles [cycle]
0
5
10
15
20
25
30
35
40
0.01
0.1
1
10
100
M2FM3
Tc=50C [TYP]
Tc=75C [TYP]
Tc=100C [TYP]
Tc=125C [TYP]
Tc=150C [TYP]
Reverse Current
Rev
e
rse Current I
R
[m
A]
Pulse measurement per diode
Reverse Voltage V
R
[V]
0
1
2
3
4
5
0
5
10
15
20
25
30
35
DC
D=0.05
0.1
0.2
0.3
0.5
SIN
0.8
M2FM3
Tj = 150C
0
t
p
V
R
T
D=t
p
/T
Reverse Power Dissipation
Rev
e
rse Pow
e
r Dissipation P
R
[W
]
Reverse Voltage V
R
[V]
10
100
1000
0.1
1
10
f=1MHz
Tl=25C
TYP
M2FM3
0.2
0.5
2
5
20
30
2000
500
200
50
20
Junction Capacitance
Junction Capacitance
C
j
[pF
]
Reverse Voltage V
R
[V]
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
M2FM3
V
R
= 15V
0
t
p
I
O
T
D=t
p
/T
0
V
R
Derating Curve
Av
erage Rectified Forw
ard Current I
O
[A]
Case Temperature Tc [C]
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
M2FM3
V
R
= 15V
0
t
p
I
O
T
D=t
p
/T
0
V
R
Derating Curve
Av
erage Rectified Forw
ard Current I
O
[A]
Lead Temperature Tl [C]
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
M2FM3
V
R
= 15V
0
t
p
I
O
T
D=t
p
/T
0
V
R
Derating Curve
Glass-epoxy substrate
Conductor layer 35um
Av
erage Rectified Forw
ard Current I
O
[A]
Ambient Temperature Ta [C]
0.01
0.1
1
10
100
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
M2FM3
ja
jl
jc
Transient Thermal Impedance
jc,
jl,
ja
Transient Thermal Impedance
[

C/W]
t [s]
Time
0
20
40
60
80
100
120
140
1
10
100
1000
M2FM3
Conductor pattern area [mm
2
]
[
C/
W
]
Conductor pattern area
ja -
ja