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Электронный компонент: S10WB20

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200V 10A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Bridge Diode
OUTLINE DIMENSIONS
RATINGS
Square In-line Package
SHINDENGEN
Unit : mm
Case : S10WB
S10WB20
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
200
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load With heatsink Tc=74
10
A
50Hz sine wave, R-load Without heatsink Ta=25
3.2
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25
170
A
Current Squared Time
I
2
t
1mst10msc=25
110
A
2
Dielectric Strength
Vdis
Terminals to case, AC 1 minute
2
kV
Mounting Torque
TOR
Recommended torque : 0.5Nm
0.8
Nm
Electrical Characteristics (Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=5A, Pulse measurement, Rating of per diode
Max.1.05
V
Reverse Current
I
R
V
R
=V
RM
,
Pulse measurement, Rating of per diode
Max.10
A
jc
junction to case, With heatsink
Max.3.9
Thermal Resistance
jl
junction to lead, Without heatsink
Max.4
/W
ja
junction to ambient, Without heatsink
Max.24
Forward Voltage
0.1
1
10
100
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
S10WBx
Tc=150
C [TYP]
Tc=25
C [TYP]
Pulse measurement per diode
Forward Voltage V
F
[V]
Forward Current I
F
[A]
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
S10WBx
Forward Power Dissipation
Tj= 150
C
Sine wave
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
S10WBx
Forward Power Dissipation
Tj= 150
C
Sine wave
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
0
0.8
1.6
2.4
3.2
4
4.8
5.6
0
20
40
60
80
100
120
140
160
S10WBx
Derating Curve
Sine wave
R-load
Free in air
no heatsink
l=25mm
l=5mm
l=15mm
Glass-epoxy substrate
Ambient Temperature Ta [
C]
Average Rectified Forward Current I
O
[A]
PCB
l