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Электронный компонент: S1NBB80

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S1NBB80
800V 1A
Copyright & Copy;2002 Shindengen Electric Mfg. Co., Ltd.
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
RATINGS
Case : 1NA
General Purpose Rectifiers
SMT Bridges
Absolute Maximum Ratings (If not specified Ta=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40 to 150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
800
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load, Glass-epoxy substrate, Ta=26 *1
1
A
I
O
50Hz sine wave, R-load, Glass-epoxy substrate, Ta=25 *2
0.84
A
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
50
A
Current Squared Time
I
2
t
1mst10ms@Tj=25
6
A
2
s
Electrical Characteristics (If not specified Ta=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=0.5A, Pulse measurement, Rating of per diode
Max 1.05
V
Reverse Current
I
R
V
R
=V
RM
,
Pulse measurement, Rating of per diode
Max 10
A
jl
junction to lead
Max 15
Thermal Resistance
ja
junction to ambient *1
Max 68
/W
ja
junction to ambient *2
Max 84
*1 : Glass epoxy substrate (pattern area : 324mm
2
)
*2 : Glass epoxy substrate (pattern area : 101mm
2
)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
1
10
S1NBB80
Ta=150C[TYP]
Ta= 25C[TYP]
5
2
0.2
0.5
Forward Voltage
I
F
[A]
F
o
rw
a
r
d
Cu
rre
n
t
Pulse measurement per diode
V
F
[V]
Forward Voltage
0
0.5
1
1.5
2
0
0.2
0.4
0.6
0.8
1
1.2
SIN
S1NBB80
Forward Power Dissipation
P
F
[W
]
I
O
[A]
Average Rectified Forward Current
F
o
rw
a
r
d
P
o
w
e
r Dis
s
i
p
a
t
i
o
n
Tj = 150C
0
20
40
60
80
100
120
140
160
0
0.2
0.4
0.6
0.8
1
1.2
SIN
S1NBB80
V
R
= V
RM
I
O
[A]
Ta [C]
Ambient Temperature
A
v
er
ag
e R
e
c
t
i
f
i
e
d
F
o
r
w
ar
d
C
u
r
r
e
n
t
Derating Curve
Glass-epoxy substrate
Soldering land 9mm x 9mm
Conductor layer 35 m
0
10
20
30
40
50
60
1
10
100
S1NBB80
2
5
20
50
Peak Surge Forward Capability
Number of Cycles [cycle]
I
FSM
[A]
P
eak
S
u
r
g
e F
o
r
w
ar
d
C
u
r
r
e
n
t
I
FS
M
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=25C before
surge current is applied