ChipFind - документация

Электронный компонент: S1VB80

Скачать:  PDF   ZIP
S1VB80
800V 1A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
(Unit : mm)
RATINGS
Case : 1V
SHINDENGEN
Switching power supply
Home Appliance,Office Equipment
Telecommunication,Factory automation
APPLICATION
Small Single In-Line(:SIL)Package
High IFSM
Applicable to Automatic Insertion
FEATURES
General Purpose Rectifiers
SIL Bridges
Absolute Maximum Ratings (If not specified Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
800
V
Average Rectified Forward Current
I
O
50Hz sine wave,R-load, On glass-epoxy substrate Ta=25
1
A
Peak Surge Forward Current
I
FSM
50Hz sine wave,Non-repetitive 1cycle peak value, Tj=25
30
A
Current Squared Time
I
2
t
1mst10msTj=25
4.5
A
2
s
Electrical Characteristics (If not specified Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=0.5A, Pulse measurement,Rating of per diode
Max.1.05
V
Reverse Current
I
R
V
R
=V
RM
, Pulse measurement,Rating of per diode
Max.10
A
Thermal Resistance
jl
junction to lead
Max.16
/W
ja
junction to ambient
Max.62
Forward Voltage
0.1
1
10
0.4
0.6
0.8
1
1.2
1.4
S1VBx
Tl=150
C [TYP]
Tl=25
C [TYP]
Pulse measurement per diode
Forward Voltage V
F
[V]
Forward Current I
F
[A]
0
0.5
1
1.5
2
0
0.2
0.4
0.6
0.8
1
S1VBx
Forward Power Dissipation
Tj= 150
C
Sine wave
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
0
0.2
0.4
0.6
0.8
1
1.2
0
20
40
60
80
100
120
140
160
S1VBx
Derating Curve
l=2mm
SIN
l=10mm
Ambient Temperature Ta [
C]
Average Rectified Forward Current I
O
[A]
l
PCB
Glass-epoxy substrate
Soldering land 3mm
Sine wave
R-load
Free in air
Peak Surge Forward Capability
0
10
20
30
40
50
1
10
100
S1VBx
2
5
20
50
I
FSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current I
FSM
[A]
non-repetitive,
sine wave,
Tj=25
C before
surge current is applied