ChipFind - документация

Электронный компонент: S20SC4M

Скачать:  PDF   ZIP
S20SC4M
40V 20A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
Unit : mm
RATINGS
SHINDENGEN
Case : MTO-3P
APPLICATION
Tj150
P
RRSM
avalanche guaranteed
Small jc
High current capacity
FEATURES
Switching power supply
DC/DC converter
Home Appliances, Office Equipment
Telecommunication
Dual
Schottky Rectifiers (SBD)
Absolute Maximum Ratings (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
40
V
Repetitive Peak Surge Reverse Voltage
V
RRSM
Pulse width 0.5ms, duty 1/40
45
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=125
20
A
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125
170
A
Repetitive Peak Surge Reverse Power
P
RRSM
Pulse width 10s, Rating of per diode, Tj=25
660
W
Mounting Torque
TOR
(Recommended torque
0.5Nm)
0.8
Nm
Electrical Characteristics (If not specified Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F2
I
F
=10A, Pulse measurement, Rating of per diode
Max.0.59
V
Reverse Current
I
R
V
R
=V
RM,
Pulse measurement, Rating of per diode
Max.5
mA
Junction Capacitance
Cj
f=1MHz, V
R
=10V, Rating of per diode
Typ.340
pF
Thermal Resistance
jc
junction to case
Max.1.2
/W
Forward Voltage
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
S20SC4M
Tc=150
C [MAX]
Tc=25
C [MAX]
Pulse measurement per diode
Tc=150
C [TYP]
Tc=25
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
100
1000
S20SC4M
0.1
1
10
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Reverse Voltage V
R
[V]
Junction Capacitance Cj [pF]
f=1MHz
Tc=25
C
TYP
per diode
Junction Capacitance
Reverse Current
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
35
40
S20SC4M
Tc=150
C [MAX]
Tc=150
C [TYP]
Pulse measurement per diode
Tc=125
C [TYP]
Tc=100
C [TYP]
Tc=75
C [TYP]
Reverse Voltage V
R
[V]
Reverse Current I
R
[mA]
0
5
10
15
20
25
30
0
10
20
30
40
50
S20SC4M
0.3
Reverse Power Dissipation
Tj = 150
C
SIN
0.2
0.5
D=0.05
DC
0.1
0.8
0
t
p
V
R
T
D=t
p
/T
Reverse Voltage V
R
[V]
Reverse Power Dissipation P
R
[W]
0
t
p
I
O
T
D=t
p
/T
0
5
10
15
20
25
0
5
10
15
20
25
30
35
40
S20SC4M
0.3
Forward Power Dissipation
Tj = 150
C
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
0
t
p
I
O
T
D=t
p
/T
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
140
160
S20SC4M
0.3
Derating Curve
V
R
= 20V
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
0
V
R
Case Temperature Tc [
C]
Average Rectified Forward Current I
O
[A]
Peak Surge Forward Capability
0
50
100
150
200
1
10
100
S20SC4M
2
5
20
50
I
FSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current I
FSM
[A]
non-repetitive,
sine wave,
Tj=125
C before
surge current is applied
t
p
I
RP
0
V
R
0.5I
RP
V
RP
I
R
P
RRSM
= I
RP
V
RP
0
20
40
60
80
100
120
0
50
100
150
SBD
Repetitive Surge Reverse Power Derating Curve
Junction Temperature Tj [
C]
P
RRSM
Derating [%]
0.1
1
10
1
10
100
SBD
Repetitive Surge Reverse Power Capability
Pulse Width t
p
[
s]
P
RRSM
(t
p
) / P
RRSM
(t
p
=10
s) Ratio
t
p
I
RP
0
V
R
0.5I
RP
V
RP
I
R
P
RRSM
= I
RP
V
RP