ChipFind - документация

Электронный компонент: S4VB60

Скачать:  PDF   ZIP
600V 4A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Bridge Diode
OUTLINE DIMENSIONS
RATINGS
Square In-line Package
SHINDENGEN
Unit : mm
Case : S4VB
S4VB60
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-40150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
600
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load, Ta=40 With heatsink fa=10/W
4
A
50Hz sine wave, R-load, Ta=40 Without heatsink
2.6
Peak Surge Forward Current
I
FSM
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25
80
A
Current Squared Time
I
2
t
1mst10msc=25
32
A
2
Mounting Torque
TOR
Recommended torque : 0.5Nm
0.8
Nm
Electrical Characteristics (Tl=25)
Item
Symbol
Conditions
Ratings
Unit
Forward Voltage
V
F
I
F
=2A, Pulse measurement, Rating of per diode
Max.1.05
V
Reverse Current
I
R
V
R
=V
RM
,
Pulse measurement, Rating of per diode
Max.10
A
Thermal Resistance
jl
junction to lead
Max.4.5 /W
Forward Voltage
0.4
0.6
0.8
1
1.2
1.4
1
10
S4VBx
Pulse measurement per diode
Tl=150
C [TYP]
Tl=25
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
0
2
4
6
8
10
12
0
1
2
3
4
5
6
S4VBx
Forward Power Dissipation
SIN
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
Tj = 150
C
Sine wave
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
S4VBx
Derating Curve
*
fa = 10
C/W
without heatsink
l=25mm
l=15mm
l= 5mm
l
Ambient Temperature Ta [
C]
Average Rectified Forward Current I
O
[A]
Sine wave
R-load
Free in air
* with thermal compound, TOR=3kg-cm
Peak Surge Forward Capability
0
20
40
60
80
100
1
10
100
S4VBx
2
5
20
50
I
FSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current I
FSM
[A]
non-repetitive,
sine wave,
Tj=25
C before
surge current is applied