BA 597
Semiconductor Group
1
Type
Ordering Code
Pin Configuration
Marking
Package
(taped)
1
2
BA 597
UPON INQUIRY
C
A
yellow/R
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
50
V
Forward current
I
F
100
mA
Total power dissipation
T
S
40
C
1)
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55 ... + 150
C
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Silicon PIN Diode
Preliminary Data
BA 597
q
RF switch, RF attenuator for frequencies above
10 MHz
q
Very low IM distortion
10.94
Semiconductor Group
2
BA 597
Characteristics per Diode
at
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
Reverse current
V
R
= 30 V
I
R
20
nA
Forward voltage
I
F
= 100 mA
V
F
0.9
V
Diode capacitance
V
R
= 10 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
C
T
0.52
0.27
pF
Forward resistance
I
F
= 1.5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
r
f
22
4.2
Charge carrier lifetime
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
L
2.5
s
PDF 
ZIP