BAR 64-02W
Semiconductor Group
Sep-07-1998
1
Silicon PIN Diode
High voltage current controlled
RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime
Very low inductance
For frequencies up to 3 GHz
Extremely small plastic SMD package
1
VES05991
2
Type
Marking Ordering Code
Pin Configuration
Package
BAR 64-02W
M
Q62702-A1215
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Unit
Value
Diode reverse voltage
V
R
V
200
100
Forward current
mA
I
F
Total power dissipation,
T
S
125C
P
tot
mW
250
Junction temperature
T
j
C
150
Operating temperature range
T
op
- 55 ...+150
C
Storage temperature
T
stg
- 55 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
220
K/W
Junction - soldering point
R
thJS
140
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
1998-11-01
BAR 64-02W
Semiconductor Group
Sep-07-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
Characteristics
V
(BR)
200
Breakdown voltage
I
(BR)
= 5 A
-
-
V
Forward voltage
I
F
= 50 mA
V
F
-
-
1.1
mV
AC characteristics
-
0.23
Diode capacitance
V
R
= 20 V,
f = 1 MHz
C
T
pF
0.35
-
C
C
0.09
-
Case capacitance
f = 1 MHz
-
-
-
Forward resistance
I
F
= 1 mA,
f = 100 MHz
I
F
= 10 mA,
f = 100 MHz
I
F
= 100 mA,
f = 100 MHz
r
f
12.5
2.1
0.85
20
3.8
1.35
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
rr
-
1.55
-
s
Series inductance
L
s
-
0.6
-
nH
Semiconductor Group
2
1998-11-01
BAR 64-02W
Semiconductor Group
Sep-07-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
0
20
40
60
80
100
120
150
0
10
20
30
40
50
60
70
80
90
100
120
T
S
T
A
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
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