BAR 64 ... W
Semiconductor Group
Sep-04-1998
1
Silicon PIN Diode
High voltage current controlled
RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime
For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 64-04W
BAR 64-05W
BAR 64-06W
Type
Marking Ordering Code
Pin Configuration
Package
BAR 64-04W
BAR 64-05W
BAR 64-06W
PPs
PRs
PSs
Q62702-A1264
Q62702-A1265
Q62702-A1266
1 = A1
1 = A1
1 = C1
2 = C2
2 = C2
2 = C2
SOT-323
3=C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter
Symbol
Unit
Value
V
V
R
200
Diode reverse voltage
Forward current
I
F
100
mA
mW
Total power dissipation,
T
S
115 C
P
tot
250
T
j
150
C
Junction temperature
- 55 ...+150
Operating temperature range
T
op
Storage temperature
T
stg
- 55 ...+150
Thermal Resistance
R
thJA
300
Junction - ambient
1)
K/W
R
thJS
140
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
1998-11-01
BAR 64 ... W
Semiconductor Group
Sep-04-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
typ.
min.
DC characteristics
Breakdown voltage
I
(BR)
= 5 A
-
V
-
200
V
(BR)
-
-
50
I
R
Reverse current
V
R
= 20 V
A
Forward voltage
I
F
= 50 mA
V
F
-
1.1
mV
-
AC characteristics
Diode capacitance
V
R
= 20 V,
f = 1 MHz
-
C
T
0.23
pF
0.35
Forward resistance
I
F
= 1 mA,
f = 100 MHz
I
F
= 10 mA,
f = 100 MHz
I
F
= 100 mA,
f = 100 MHz
20
2.8
1.35
r
f
12.5
2.1
0.85
-
-
-
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
-
-
s
1.55
rr
-
Series inductance
-
L
s
nH
1.2
Semiconductor Group
2
1998-11-01