Semiconductor Group
1
Silicon Switching Diode
BAS 16
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAS 16
Q62702-F739
A6s
SOT-23
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
75
V
Forward current
I
F
250
mA
Junction temperature
T
j
150
C
Total power dissipation,
T
S
= 54 C
P
tot
370
mW
Storage temperature range
T
stg
65 ... + 150
Peak reverse voltage
V
RM
85
Surge forward current,
t
= 1
s
I
FS
4.5
A
Thermal Resistance
Junction - ambient
2)
R
th JA
330
K/W
Junction - soldering point
R
th JS
260
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
For high-speed switching
07.94
Semiconductor Group
2
BAS 16
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Test circuit for reverse recovery time
Pulse generator:
t
p
= 100 ns,
D
= 0.05
Oscillograph:
R
= 50
t
r
= 0.6 ns,
R
j
= 50
t
r
= 0.35 ns
C
1 pF
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Breakdown voltage
I
(BR)
= 100
A
V
(BR)
75
A
Reverse current
V
R
= 75 V
V
R
= 25 V,
T
A
= 150 C
V
R
= 75 V,
T
A
= 150 C
I
R
1
30
50
AC characteristics
ns
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
measured at
I
R
= 1 mA
t
rr
6
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
715
855
1000
1250
pF
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
D
2
V
Forward recovery voltage
I
F
= 10 mA,
t
p
= 20 ns
V
fr
1.75
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