BAS 40-07W
Semiconductor Group
Sep-09-1998
1
Silicon Schottky Diode
Preliminary data
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
Available with CECC quality assessment
VPS05605
4
2
1
3
BAS 40-07W
Package
Pin Configuration
Type
Marking Ordering Code
4=A1
BAS 40-07W
47s
3=A2
Q62702-
1=C1
2=C2
SOT-343
Maximum Ratings
Parameter
Value
Unit
Symbol
V
R
40
V
Diode reverse voltage
mA
120
Forward current
I
F
Surge forward current,
t
10ms
I
FSM
200
P
tot
250
Total power dissipation,
T
S
81C
mW
C
T
j
Junction temperature
150
Operating temperature range
- 55 ...+150
T
op
T
stg
- 55 ...+150
Storage temperature
Maximum Ratings
K/W
Junction - ambient
1)
R
thJA
345
Junction - soldering point
R
thJS
275
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
1998-11-01
BAS 40-07W
Semiconductor Group
Sep-09-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
typ.
min.
DC characteristics
V
-
V
(BR)
40
Breakdown voltage
I
(BR)
= 10 A
-
A
1
10
-
-
-
-
I
R
Reverse current
V
R
= 30 V
V
R
= 40 V
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
-
-
-
310
450
720
V
F
380
500
1000
AC characteristics
pF
C
T
-
Diode capacitance
V
R
= 0 V,
f = 1 MHz
4
5
ps
Charge carrier life time
I
F
= 25 mA
100
-
-
Differential forward resistance
I
F
= 10 mA,
f = 10 kHz
r
f
-
10
-
Semiconductor Group
2
1998-11-01
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