Semiconductor Group
1
Dec-20-1996
BAT 68W
Preliminary data
Silicon Schottky Diodes
For mixer applications in the VHF/UHF range
For high speed switching
BAT 68-04W
BAT68-05W
BAT68-06W
Type
Marking Ordering Code
Pin Configuration
Package
BAT 68-04W
84s
Q62702-
1 = A1
2 = K2
3 = K1/A2 SOT-323
BAT 68-05W
85s
Q62702-
1 = A1
2 = A2
3 = K1/K2 SOT-323
BAT 68-06W
86s
Q62702-
1 = K1
2 = K2
3 = A1/A2 SOT-323
BAT 68W
83s
Q62702-
1 = A
n.c.
3 = K
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
R
8
V
Forward current
I
F
130
mA
Total power dissipation, BAT68W
T
S
=97C
P
tot
150
mW
Total power dissipation, BAW68-04...06W
T
S
=92C
P
tot
150
Junction temperature
T
j
150
C
Operating temperature range
T
op
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - ambient, BAT68W
R
thJA
435
K/W
Junction - ambient, BAT68-04W...06W
R
thJA
550
Junctui - soldering point, BAT68W
R
thJS
355
Junction - soldering point, BAT68-04W...06W
R
thJS
390
Semiconductor Group
2
Dec-20-1996
BAT 68W
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
8
-
-
V
Reverse current
V
R
= 1 V,
T
A
= 25 C
V
R
= 1 V,
T
A
= 60 C
I
R
-
-
-
-
1.2
0.1
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
340
-
390
318
500
340
mV
Diode capacitance
V
R
= 1 V,
f = 1 MHz
C
T
-
-
1
pF
Differential forward resistance
I
F
= 5 mA
R
F
-
-
10
Forward current
I
F
=
f (T
A
*;
T
S
)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68W
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
20
40
60
80
100
120
140
160
mA
200
I
F
T
S
T
A
Forward current
I
F
=
f (T
A
*;
T
S
)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68-04W, -05W, -06W
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
20
40
60
80
100
120
140
160
mA
200
I
F
T
S
T
A
PDF 
ZIP
