BBY 56-03W
Semiconductor Group
Au -14-1998
1
Silicon Tuning Diode
Preliminary data
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread
VPS05176
1
2
Type
Marking
Ordering Code
Pin Configuration
Package
BBY 56-03W
6 cathd. red
Q62702-
1 = C
2 = A
SOD-323
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ...+150
C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group
1
1998-11-01
BBY 56-03W
Semiconductor Group
Au -14-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
min.
typ.
DC characteristics
I
R
-
Reverse current
V
R
= 8 V
1
-
nA
I
R
A
-
Reverse current
V
R
= 8 V,
T
A
= 65 C
100
-
AC characteristics
Diode capacitance
V
R
= 0.32 V,
f = 1 MHz
V
R
= 1 V,
f = 1 MHz
V
R
= 2 V,
f = 1 MHz
V
R
= 2.38 V,
f = 1 MHz
V
R
= 3 ,
f = 1 MHz
C
T
59
39
22
19.4
15.9
-
-
-
-
-
67
43
27.2
23.7
19
pF
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V,
f = 1 MHz
C
T1
/
C
T3
-
2.45
-
-
Series resistance
V
R
= 1 V,
f = 330 MHz
r
s
-
0.3
-
Case capacitance
f = 1 MHz
C
C
-
0.09
-
pF
Series inductance chip to ground
L
s
-
0.6
-
nH
Semiconductor Group
2
1998-11-01
PDF 
ZIP