Semiconductor Group
1
Nov-28-1996
BF 569W
kein Status
PNP Silicon RF Transistor
For oscillators, mixer and self-oscillating
mixer stages in UHF TV-tuner
Type
Marking Ordering Code
Pin Configuration
Package
BF 569W
LHs
Q62702-F1582
1 = B
2 = E
3 = C
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
35
V
Collector-base voltage
V
CBO
40
Emitter-base voltage
V
EBO
3
Collector current
I
C
30
mA
Base current
I
B
5
Total power dissipation
T
S
93 C
P
tot
280
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
R
thJS
205
K/W
Semiconductor Group
2
Nov-28-1996
BF 569W
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
35
-
-
V
Collector-base cutoff current
V
CB
= 20 ,
I
E
= 0
I
CBO
-
-
100
nA
DC current gain
I
C
= 3 mA,
V
CE
= 10 V
h
FE
20
50
-
-
AC Characteristics
Transition frequency
I
C
= 30 mA,
V
CE
= 10 V,
f = 100 MHz
f
T
-
950
-
MHz
Collector-base capacitance
V
CB
= 10 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
cb
-
0.32
-
pF
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
ce
-
0.15
-
Noise figure
I
C
= 3 mA,
V
CE
= 10 V,
f = 800 MHz
Z
S
= 60
F
-
4.5
-
dB
Cannon-base power gain
I
C
= 3 mA,
V
CB
= 10 V,
f = 800 MHz
R
L
= 500
G
p
-
14.8
-
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