Semiconductor Group
1
NPN Silicon RF Transistor
BF 599
q
Common emitter IF/RF amplifier
q
Low feedback capacitance
due to shield diffusion
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BF 599
Q62702-F979
NB
SOT-23
1
2
3
B
E
C
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
25
V
Collector-base voltage
V
CB0
40
Emitter-base voltage
V
EB0
4
Thermal Resistance
Junction - ambient
2)
R
th JA
450
K/W
Total power dissipation,
T
A
25 C
P
tot
280
mW
Storage temperature range
T
stg
65 ... + 150
Base current
I
B
5
Junction temperature
T
j
150
C
Collector current
I
C
25
mA
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
07.94
Semiconductor Group
2
BF 599
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
AC Characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR) CE0
25
nA
Collector cutoff current
V
CB
= 20 V,
I
E
= 0
I
CB0
100
DC current gain
I
C
= 7 mA,
V
CE
= 10 V
h
FE
38
70
V
Collector-emitter saturation voltage
I
C
= 10 mA,
I
B
= 1 mA
V
CE sat
0.15
Base-emitter voltage
I
C
= 7 mA,
V
CE
= 10 V
V
BE
0.78
MHz
Transition frequency
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
550
pF
Collector-base capacitance
V
CB
= 10 V,
V
BE
= 0 V,
f
= 1 MHz
C
cb
0.35
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
= 0 V,
f
= 1 MHz
C
ce
0.68
dB
Optimum power gain
I
C
= 7 mA,
V
CE
= 10 V,
f
= 35 MHz
G
pe opt
43
mS
Forward transfer admittance
I
C
= 7 mA,
V
CE
= 10 V,
f
= 35 MHz
I
y
21e
I
175
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