PNP Silicon RF Transistor
BFQ 75
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Marking
Package
1)
Pin Configuration
BFQ 75
Q62702-F803
75
Cerec-X
1
2
3
4
B
E
C
E
Ordering Code
(tape and reel)
Thermal Resistance
Junction - ambient
2)
R
th JA
260
K/W
Junction - soldering point
3)
R
th JS
180
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
12
V
Emitter-base voltage
V
EB0
2
Collector current
I
C
50
mA
Collector-base voltage
V
CB0
15
Junction temperature
T
j
175
C
Ambient temperature range
T
A
65 ... + 175
Total power dissipation,
T
S
112 C
3)
P
tot
350
mW
Storage temperature range
T
stg
65 ... + 175
Collector-emitter voltage,
V
BE
= 0
V
CES
1
1)
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
3)
T
S
is measured on the collector lead at the soldering point to the pcb.
q
For broadband amplifiers up to 2 GHz
at collector currents from 5 mA to 30 mA.
q
Complementary type: BFQ 72 (NPN).
BFQ 75
BFQ 75
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CE0
12
A
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
I
EB0
10
DC current gain
I
C
= 30 mA,
V
CE
= 5 V
h
FE
20
50
nA
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
I
CB0
50
AC Characteristics
Power gain
I
C
= 30 mA,
V
CE
= 8 V,
f
= 800 MHz,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
G
pe
14
GHz
Transition frequency
I
C
= 30 mA,
V
CE
= 5 V,
f
= 500 MHz
f
T
5
Output capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
C
obs
1.1
dB
Noise figure
I
C
= 10 mA,
V
CE
= 8 V,
f
= 10 MHz,
Z
S
= 50
I
C
= 10 mA,
V
CE
= 8 V,
f
= 800 MHz,
Z
S
= 50
F
2.2
3
pF
Collector-base capacitance
V
CB
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
C
cb
0.75
Input capacitance
V
EB
= 0.5 V,
I
C
=
i
c
= 0,
f
= 1 MHz
C
ibo
1.6
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