Semiconductor Group
1
Dec-11-1996
BFT 92W
PNP Silicon RF Transistor
For broadband amplifiers up to 2GHz
at collector currents up to 20mA
Complementary type: BFR 92W (NPN)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFT 92W
W1s
Q62702-F1681
1 = B
2 = E
3 = C
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
25
mA
Base current
I
B
3
Total power dissipation
T
S
105 C
P
tot
200
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
225
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Dec-11-1996
BFT 92W
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
15
-
-
V
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
I
EBO
-
-
10
A
DC current gain
I
C
= 15 mA,
V
CE
= 8 V
h
FE
15
50
-
-
Semiconductor Group
3
Dec-11-1996
BFT 92W
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 15 mA,
V
CE
= 8 V,
f = 500 MHz
f
T
3.5
5
-
GHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
0.58
0.9
pF
Collector-emitter capacitance
V
CE
= 10 V,
f = 1 MHz
C
ce
-
0.3
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
0.77
-
Noise figure
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
3.2
2
-
-
dB
Power gain
2)
I
C
= 15 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ma
-
-
8.5
14
-
-
Transducer gain
I
C
= 15 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
6
11.5
-
-
2)
G
ma
= |
S
21
/
S
12
| (k-(k
2
-1)
1/2
)
Semiconductor Group
4
Dec-11-1996
BFT 92W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
4.5354
fA
VAF =
10.983
V
NE =
1.1172
-
VAR =
47.577
V
NC =
1.206
-
RBM =
1.5939
CJE =
1.7785
fF
TF =
32.171
ps
ITF =
0.013277
mA
VJC =
1.2
V
TR =
2.0779
ns
MJS =
0
-
XTI =
3
-
BF =
98.533
-
IKF =
0.016123
A
BR =
10.297
-
IKR =
0.019729
A
RB =
7.9562
RE =
1.5119
VJE =
0.79082
V
XTF =
0.30227
-
PTF =
0
deg
MJC =
0.3
-
CJS =
0
fF
XTB =
0
-
FC =
0.75167
-
NF =
0.90551
-
ISE =
12.196
fA
NR =
1.2703
-
ISC =
0.024709
fA
IRB =
0.79584
mA
RC =
0.66749
MJE =
0.32167
-
VTF =
0.21451
V
CJC =
922.07
fF
XCJC =
0.3
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut fr Mobil-und Satellitenfunktechnik (IMST)
1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
0.57
nH
LBO =
0.4
nH
LEI =
0.43
nH
LEO =
0.5
nH
LCI =
0
nH
LCO =
0.41
nH
CBE =
61
fF
CCB =
101
fF
CCE =
175
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
5
Dec-11-1996
BFT 92W
Total power dissipation
P
tot
=
f (T
A
*,
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.1
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
6
Dec-11-1996
BFT 92W
Collector-base capacitance
C
cb
=
f (V
CB
)
V
BE
=
v
be
= 0,
f = 1MHz
0
2
4
6
8
10
12
14
16
V
20
V
R
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
pF
1.8
C
cb
Transition frequency
f
T
=
f (I
C
)
V
CE
= Parameter
0
5
10
15
20
mA
30
I
C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
GHz
6.0
f
T
10V
8V
5V
3V
2V
1V
0.7V
Power Gain
G
ma
,
G
ms
=
f(I
C
)
f = 0.9GHz
V
CE
= Parameter
0
5
10
15
20
mA
30
I
C
5
6
7
8
9
10
11
12
13
14
dB
16
G
10V
5V
3V
2V
1V
0.7V
Power Gain
G
ma
,
G
ms
=
f(I
C
)
f = 1.8GHz
V
CE
= Parameter
0
5
10
15
20
mA
30
I
C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
dB
10.0
G
10V
5V
3V
2V
1V
0.7V
Semiconductor Group
7
Dec-11-1996
BFT 92W
Power Gain
G
ma
,
G
ms
=
f(V
CE
):_____
|
S
21
|
2
=
f(V
CE
):---------
f = Parameter
0
2
4
6
8
V
12
V
CE
0
2
4
6
8
10
12
dB
16
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
I
C
=15mA
Intermodulation Intercept Point
IP
3
=
f(I
C
)
(3rd order, Output,
Z
S
=
Z
L
=50
)
V
CE
= Parameter,
f = 900MHz
0
5
10
15
20
mA
30
I
C
0
5
10
15
20
25
dBm
35
IP
3
8V
3V
2V
1V
Power Gain
G
ma
,
G
ms
=
f(f)
V
CE
= Parameter
0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
0
5
10
15
20
25
dB
35
G
10V
2V
1V
0.7V
I
C
=15mA
Power Gain |
S
21
|
2
=
f(f)
V
CE
= Parameter
0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
-5
0
5
10
15
20
dB
30
S
21
10V
2V
1V
0.7V
I
C
=15mA
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