BGA 318
Semiconductor Group
Sep-04-1998
1
Silicon Bipolar MMIC-Amplifier
Preliminary data
Cascadable 50
-gain block
16 dB typical gain at 1.0 GHz
12 dBm typical
P
-1dB
at 1.0 GHz
3 dB-bandwidth: DC to 1.2 GHz
VPS05178
2
1
3
4
EHA07312
3
1
2, 4
RF IN
RF OUT/Bias
GND
Circuit Diagram
Type
Marking Ordering Code
Pin Configuration
Package
BGA 318 BNs
Q62702-G0043
1 RFout/bias 2 GND 3 RFinput
4 GND SOT-143
Maximum Ratings
Parameter
Value
Symbol
Unit
Device current
I
D
mA
60
Total power dissipation,
T
S
99 C
250
P
tot
mW
R
F
input power
dBm
5
P
RFin
T
j
Junction temperature
150
C
Ambient temperature
T
A
-65 ...+150
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
Junction - soldering point
1)
R
thJS
205
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb
Semiconductor Group
1
1998-11-01
BGA 318
Semiconductor Group
Sep-04-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
typ.
min.
AC characteristics (
V
D
= 4.7 V,
Z
o
= 50
)
dB
18
16
12
-
-
-
-
-
-
|
S
21
|
2
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Insertion point gain flatness
f = 0.1 GHz to 0.6 GHz
-
|
S
21
|
2
-
+-0.7
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 2 GHz
NF
3.5
4
5
-
-
-
-
-
-
1dB compression point
f = 1 GHz
P
-1dB
-
dBm
-
12
Return loss input
f = 0.1 GHz to 2 GHz
RL
in
-
14
-
dB
Return loss output
f = 0.1 GHz to 3 GHz
RL
out
-
10
-
Typical biasing configuration
EHA07313
D
V
RFC (optional)
IN
C
Block
Block
C
OUT
D
Bias
R
min.
CC
V = 7 V
1
3
2
4
R
Bias
=
V
CC
-
V
D
/
I
D
V
D
= 4.7V
Semiconductor Group
2
1998-11-01
BGA 318
Semiconductor Group
Sep-04-1998
3
S-Parameters at
T
A
= 25 C
f
S
11
S
22
S
12
S
21
ANG
ANG
MAG
MAG
MAG
ANG
GHz
MAG
ANG
V
D
= 4.7 V,
Z
o
= 50
0.01
0.1
0.3
0.5
0.8
1
1.9
2.4
3
0.196
0.193
0.194
0.191
0.184
0.175
0.185
0.241
0.298
0.2
-4.8
-14.4
-25.9
-45
-60.3
-130.6
-170.6
159.6
8.01
8
7.75
7.28
6.43
5.83
3.91
2.99
2.38
178.9
171.6
155.4
139.9
119.1
106.8
67.6
45.5
27.6
0.077
0.078
0.082
0.089
0.105
0.117
0.164
0.193
0.218
0.6
4.9
13.8
21.1
27.9
30.2
30.2
26.8
22.8
0.327
0.324
0.312
0.294
0.26
0.238
0.184
0.173
0.178
-0.5
-8.6
-25
-41.2
-62.9
-76.2
-113
-124.4
-131.2
Insertion power gain |
S
21
|
2
=
f ( f )
V
D
= 4.7V,
I
D
= 35 mA
10
-1
10
0
10
1
GHz
f
0
5
10
15
dB
25
|
S
21
|
2
Noise figure
NF = f ( f )
V
D
= 4.7V,
I
D
= 35 mA
10
-1
10
0
10
1
GHz
f
0
2
4
6
dB
10
NF
Semiconductor Group
3
1998-11-01
BGA 318
Semiconductor Group
Sep-04-1998
4
Output power 1-dB-gain compression
P
-1dB
=
f ( f )
V
D
= 4.7V,
I
D
= 35 mA
10
-1
10
0
10
1
GHz
f
0
5
10
dBm
20
P
-1dB
Semiconductor Group
4
1998-11-01
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