BGA 427
Semiconductor Group
Au -11-1998
1
in SIEGET
25-Technologie
Si-MMIC-Amplifier
VPS05605
4
2
1
3
Preliminary data
Cascadable 50
-gain block
Unconditionally stable
Gain |
S
21
|
2
= 18,5 dB at 1.8 GHz (appl.1)
gain |
S
21
|
2
= 22 dB at 1.8 GHz (appl.2)
I
P
3out
= +7 dBm at 1.8 GHz (
V
D
=3V,
I
D
=9.4mA)
Noise figure
NF = 2.2 dB at 1.8 GHz
typical device voltage
V
D
= 2 V to 5 V
Reverse isolation < 35 dB (appl.2)
EHA07378
V
2
1
IN
OUT
+
4
3
GND
Circuit Diagram
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Package
Pin Configuration
Q62702-G0067
1, IN
BGA 427
2, GND
3, +V
4, Out
SOT-343
BMs
Maximum Ratings
Symbol
Value
Parameter
Unit
Device current
I
D
mA
25
Device voltage
6
V
V
D
,+V
P
tot
150
mW
Total power dissipation,
T
S
tbd C
dBm
R
F
input power
P
RFin
-10
Junction temperature
T
j
150
C
Ambient temperature
-65 ...+150
T
A
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
tbd
K/W
Junction - soldering point
1)
R
thJS
1)
T
S
is measured on the emitter (GND) lead at the soldering point to the pcb
Semiconductor Group
1
1998-11-01
BGA 427
Semiconductor Group
Au -11-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
AC characteristics
V
D
= 3 V,
Z
o
= 50W, Testfixture Appl..1
|
S
21
|
2
-
-
-
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
27
22
28.5
-
-
-
dB
Reverse isolation
f = 1.8 GHz
S12
-
22
-
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
-
-
-
-
-
-
1.9
2
2.2
NF
Intercept point at the output
f = 1.8 GHz
IP
3out
-
+ 7
-
dBm
Return loss input
f = 1.8 GHz
RL
in
-
>12
-
dB
Return loss output
f = 1.8 GHz
RL
out
-
>9
-
Typical configuration
Appl.2
Appl.1
EHA07379
100 pF
100 pF
1 nF
RF OUT
RF IN
GND
+
V
BGA 427
EHA07380
2.2 pF
100 pF
RF IN
100 pF
GND
RF OUT
100 nH
10 nF
100 pF
+
V
BGA 427
Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device
to provide a low impedance path! (appl.1)
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground!
Semiconductor Group
2
1998-11-01
BGA 427
Semiconductor Group
Au -11-1998
3
S-Parameters at
T
A
= 25 C, (Testfixture, Appl.1)
f
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
-
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
0.1
0.2
0.5
0.8
0.9
1
1.5
1.8
1.9
2
2.5
3
-38.3
-16
-20.8
-56.9
-69.1
-80.6
-133.5
-156.1
-162.8
-167.7
172.8
153.3
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
0.1382
0.1179
0.1697
0.1824
0.1782
0.176
0.1827
0.1969
0.2021
0.2116
0.2437
0.258
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
EHA07381
3
R
R
1
P1
C
P2
C
1
C
R
2
P3
C
C
P4
P5
C
R
4
11
14
13
T2
12
C'-E'-
including parasitics
Diode
OUT
BGA 427-chip
IN
GND
+
V
T1
T1
T501
T2
T501
R
1
14.5k
R
2
280
R
3
2.4k
R
4
170
C
1
2.3pF
C
P1
0.2pF
0.2pF
C
P2
C
P3
0.6pF
C
P4
0.1pF
C
P5
0.1pF
C'-E'-diode T1
Semiconductor Group
3
1998-11-01
BGA 427
Semiconductor Group
Au -11-1998
4
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
0.21024
aA
V
39.251
VAF =
NE =
1.7763
-
V
VAR =
34.368
NC =
1.3152
-
RBM =
1.3491
CJE =
3.7265
fF
ps
4.5899
TF =
ITF =
1.3364
mA
V
0.99532
VJC =
TR =
1.4935
ns
-
MJS =
0
XTI =
3
-
NF =
1.0405
-
ISE =
fA
15.761
0.96647
-
NR =
ISC =
0.037223
fA
0.21215
mA
IRB =
RC =
0.12691
0.37747
-
MJE =
VTF =
V
0.19762
96.941
fF
CJC =
XCJC =
0.08161
-
0.75
V
VJS =
EG =
1.11
eV
300
K
TNOM
BF =
83.23
-
A
0.16493
IKF =
BR =
10.526
-
A
IKR =
0.25052
RB =
15
RE =
1.9289
VJE =
0.70367
V
-
XTF =
0.3641
PTF =
0
deg
-
0.48652
MJC =
CJS =
0
fF
-
XTB =
0
FC =
0.99469
-
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
RS =
20
IS =
2
fA
-
1.02
N =
All parameters are ready to use, no scalling is necessary
Package Equivalent Circuit:
L
BI
=
0.36
nH
nH
0.4
L
BO
=
L
EI
=
0.3
nH
nH
0.15
L
EO
=
L
CI
=
nH
0.36
nH
0.4
L
CO
=
C
BE
=
95
fF
C
CB
=
fF
6
C
CE
=
132
fF
fF
28
C
1
=
C
2
=
88
fF
C
3
=
8
fF
L
1
=
0.6
nH
L
2
=
0.4
nH
EHA07382
L
BI
1
C
BE
C
BO
L
EI
L
L
EO
CB
C
CI
L
C
3
CO
L
CE
C
Chip
11
13
12
C'-E'-
IN
Diode
C
2
2
L
OUT
L
1
14
+
V
GND
BGA 427
Valid up to 3GHz
Extracted on behalf of SIEMENS Small Signal Semiconductors by
Institut fr Mobil-und Satellitentechnik (IMST)
1996 SIEMENS AG
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
1998-11-01
BGA 427
Semiconductor Group
Au -11-1998
5
Insertion power gain |
S
21
|
2
=
f (f)
V
D
,
I
D
= parameter
10
-1
10
0
10
1
GHz
f
0
5
10
15
20
25
dB
35
|
S
21
|
2
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
Noise figure
NF = f (f)
V
D
,
I
D
= parameter
10
-1
10
0
10
1
GHz
f
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
dB
5.0
NF
VD=5V, ID=17.5mA
VD=3V, ID=9.5mA
Intercept point at the output
IP
3out
=
f (f)
V
D
,
I
D
= parameter
10
-1
10
0
10
1
GHz
f
0
5
10
15
dBm
25
IP
3out
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
Semiconductor Group
5
1998-11-01
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