Semiconductor Group
1
Jan-09-1997
BSM 10 GD 60 DN2
IGBT Power Module
Power module
3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type
V
CE
I
C
Package
Ordering Code
BSM 10 GD 60 DN2
600V
10A
ECONOPACK 1
C67076-A2508-A67
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
600
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
600
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 40 C
I
C
10
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 40 C
I
Cpuls
20
Power dissipation per IGBT
T
C
= 25 C
P
tot
35
W
Chip temperature
T
j
+ 125
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
3.5
K/W
Diode thermal resistance, chip case
R
thJCD
4.5
Insulation test voltage,
t
= 1min.
V
is
2500
Vac
Creepage distance
-
12
mm
Clearance
-
10
DIN humidity category, DIN 40 040
-
F
sec
IEC climatic category, DIN IEC 68-1
-
40 / 125 / 56
Semiconductor Group
2
Jan-09-1997
BSM 10 GD 60 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 0.35 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 10 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 10 A,
T
j
= 125 C
V
CE(sat)
-
-
2.2
2.1
2.8
2.7
Zero gate voltage collector current
V
CE
= 600 V,
V
GE
= 0 V,
T
j
= 25 C
I
CES
-
-
1
mA
Gate-emitter leakage current
V
GE
= 25 V,
V
CE
= 0 V
I
GES
-
-
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 10 A
g
fs
3
-
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
iss
-
570
-
pF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
oss
-
80
-
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
50
-
Semiconductor Group
3
Jan-09-1997
BSM 10 GD 60 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 10 A
R
Gon
= 100
t
d(on)
-
40
80
ns
Rise time
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 10 A
R
Gon
= 100
t
r
nS
Turn-off delay time
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 10 A
R
Goff
= 100
t
d(off)
-
250
370
ns
Fall time
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 10 A
R
Goff
= 100
t
f
nS
Free-Wheel Diode
Diode forward voltage
I
F
= 10 A,
V
GE
= 0 V,
T
j
= 25 C
I
F
= 10 A,
V
GE
= 0 V,
T
j
= 125 C
V
F
-
-
1.4
1.6
-
-
V
Reverse recovery time
I
F
= 10 A,
V
R
= -300 V,
V
GE
= 0 V
d
i
F
/
dt
= -100 A/s,
T
j
= 125 C
t
rr
-
0.1
-
s
Reverse recovery charge
I
F
= 10 A,
V
R
= -300 V,
V
GE
= 0 V
d
i
F
/
dt
= -100 A/s
T
j
= 25 C
T
j
= 125 C
Q
rr
-
-
0.5
0.25
-
-
C
Semiconductor Group
5
Jan-09-1997
BSM 10 GD 60 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0
1
2
3
V
5
V
CE
0
2
4
6
8
10
12
14
16
A
20
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125 C
0
1
2
3
V
5
V
CE
0
2
4
6
8
10
12
14
16
A
20
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 s,
V
CE
= 20 V
0
2
4
6
8
10
V
14
V
GE
0
2
4
6
8
10
12
14
16
A
20
I
C
PDF 
ZIP