Semiconductor Group
1
Aug-01-1996
BSM 150 GB 170 DN2
IGBT Power Module
Preliminary data
Half-bridge
Including fast free-wheeling diodes
Package with insulated metal base plate
R
G on,min
= 10 Ohm
Type
V
CE
I
C
Package
Ordering Code
BSM 150 GB 170 DN2
1700V 220A
HALF-BRIDGE 2
C67070-A2704-A67
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1700
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1700
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 80 C
I
C
150
220
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 80 C
I
Cpuls
300
440
Power dissipation per IGBT
T
C
= 25 C
P
tot
1250
W
Chip temperature
T
j
+ 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
0.1
K/W
Diode thermal resistance, chip case
R
thJCD
0.32
Insulation test voltage,
t
= 1min.
V
is
4000
Vac
Creepage distance
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Semiconductor Group
2
Aug-01-1996
BSM 150 GB 170 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 10 mA
V
GE(th)
4.8
5.5
6.2
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 150 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 150 A,
T
j
= 125 C
V
CE(sat)
-
-
4.6
3.4
5.3
3.9
Zero gate voltage collector current
V
CE
= 1700 V,
V
GE
= 0 V,
T
j
= 25 C
V
CE
= 1700 V,
V
GE
= 0 V,
T
j
= 125 C
I
CES
-
-
4
1
-
1.5
mA
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
I
GES
-
-
400
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 150 A
g
fs
54
-
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
iss
-
20
-
nF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
oss
-
2
-
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
0.55
-
Semiconductor Group
3
Aug-01-1996
BSM 150 GB 170 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 1200 V,
V
GE
= 15 V,
I
C
= 150 A
R
Gon
= 10
t
d(on)
-
520
1000
ns
Rise time
V
CC
= 1200 V,
V
GE
= 15 V,
I
C
= 150 A
R
Gon
= 10
t
r
-
200
400
Turn-off delay time
V
CC
= 1200 V,
V
GE
= -15 V,
I
C
= 150 A
R
Goff
= 10
t
d(off)
-
1200
1800
Fall time
V
CC
= 1200 V,
V
GE
= -15 V,
I
C
= 150 A
R
Goff
= 10
t
f
-
110
160
Free-Wheel Diode
Diode forward voltage
I
F
= 150 A,
V
GE
= 0 V,
T
j
= 25 C
I
F
= 150 A,
V
GE
= 0 V,
T
j
= 125 C
V
F
-
-
2.1
2.3
-
2.8
V
Reverse recovery time
I
F
= 150 A,
V
R
= -1200 V,
V
GE
= 0 V
d
i
F
/
dt
= -1200 A/s,
T
j
= 125 C
t
rr
-
0.6
-
s
Reverse recovery charge
I
F
= 150 A,
V
R
= -1200 V,
V
GE
= 0 V
d
i
F
/
dt
= -1200 A/s
T
j
= 25 C
T
j
= 125 C
Q
rr
-
-
36
11
-
-
C
Semiconductor Group
5
Aug-01-1996
BSM 150 GB 170 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0.0
1.0
2.0
3.0
4.0
V
6.0
V
CE
0
20
40
60
80
100
120
140
160
180
200
220
240
260
A
300
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125 C
0.0
1.0
2.0
3.0
4.0
V
6.0
V
CE
0
20
40
60
80
100
120
140
160
180
200
220
240
260
A
300
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 s,
V
CE
= 20 V
0
2
4
6
8
10
V
14
V
GE
0
50
100
150
200
250
300
350
400
450
500
A
600
I
C
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