Semiconductor Group
1
NPN Silicon AF Transistor
BC 368
5.91
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BC 368
C62702-C747
TO-92
1
2
3
E
C
B
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
20
V
Peak collector current
I
CM
2
Base current
I
B
100
mA
Collector current
I
C
1
A
Junction temperature
T
j
150
C
Total power dissipation,
T
C
= 90 C
2)
P
tot
0.8 (1)
W
Storage temperature range
T
stg
65 ... + 150
Collector-base voltage
V
CB0
25
Thermal Resistance
Junction - ambient
2)
R
th JA
156
K/W
Emitter-base voltage
V
EB0
5
Peak base current
I
BM
200
Junction - case
3)
R
th JC
75
1)
For detailed information see chapter Package Outlines.
2)
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
10 mm large copper area for
the collector terminal,
R
thJA
= 125 K/W and thus
P
tot max
= 1 W at
T
A
= 25 C.
3)
Mounted on Al heat sink 15 mm
25 mm
0.5 mm.
q
High current gain
q
High collector current
q
Low collector-emitter saturation voltage
q
Complementary type: BC 369 (PNP)
1
2
3
Semiconductor Group
2
BC 368
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 30 mA
V
(BR)CE0
20
Collector-base breakdown voltage
I
C
= 10
A
V
(BR)CB0
25
DC current gain
I
C
= 5 mA;
V
CE
= 10 V
I
C
= 500 mA;
V
CE
= 1 V
1)
I
C
= 1 A;
V
CE
= 1 V
1)
h
FE
50
85
60
160
375
MHz
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
100
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
AC characteristics
Emitter-base breakdown voltage
I
E
= 1
A
V
(BR)EB0
5
nA
A
Collector cutoff current
V
CB
= 25 V
V
CB
= 25 V,
T
A
= 150 C
I
CB0
100
10
nA
Emitter cutoff current
V
EB
= 5 V
I
EB0
100
V
Collector-emitter saturation voltage
1)
I
C
= 1 A;
I
B
= 100 mA
V
CEsat
0.5
Base-emitter voltage
1)
I
C
= 5 mA;
V
CE
= 10 V
I
C
= 1 A;
V
CE
= 1 V
V
BE
0.6
1
1)
Pulse test:
t
300
s,
D
2 %.
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