Semiconductor Group
1
12.96
BYP 302
FRED Diode
Fast recovery epitaxial diode
Soft recovery characteristics
Type
V
RRM
I
FRMS
t
rr
Package
Ordering Code
BYP 302
1200V
40A
130ns
TO-218 AD
C67047-A2252-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Mean forward current
T
C
= 90 C,
D
= 0.5
I
FAV
25
A
RMS forward current
I
FRMS
40
Surge forward current, sine halfwave, aperiodic
T
j
= 100 C,
f
= 50 Hz
I
FSM
115
Repetitive peak forward current
T
j
= 100 C,
t
p
10 s
I
FRM
260
i
2
t
value
T
j
= 100 C,
t
p
= 10 ms
i
2
d
t
66
A
2
s
Repetitive peak reverse voltage
V
RRM
1200
V
Surge peak reverse voltage
V
RSM
1200
Power dissipation
T
C
= 90 C
P
tot
75
W
Chip or operating temperature
T
j
-40 ... + 150
C
Storage temperature
T
stg
-40 ... + 150
Thermal resistance, chip case
R
thJC
0.8
K/W
Thermal resistance, chip-ambient
R
thJA
46
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
40 / 150 / 56
Semiconductor Group
2
12.96
BYP 302
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Forward voltage drop
I
F
= 15 A,
T
j
= 25 C
I
F
= 25 A,
T
j
= 25 C
I
F
= 15 A,
T
j
= 100 C
I
F
= 25 A,
T
j
= 100 C
V
F
-
-
-
-
1.8
1.5
2.2
1.9
-
-
2.7
-
V
Reverse current
V
R
= 1200 V,
T
j
= 25 C
V
R
= 1200 V,
T
j
= 100 C
V
R
= 1200 V,
T
j
= 150 C
I
R
-
-
-
0.15
0.05
0.01
-
-
0.25
mA
AC Characteristics
Reverse recovery charge
I
F
= 25 A,
V
CC
= 500 V,
d
i
F
/
d
t = -1000 A/s
T
j
= 100 C
Q
rr
-
4.5
-
C
Peak reverse recovery current
I
F
= 25 A,
V
CC
= 500 V,
d
i
F
/
d
t = -1000 A/s
T
j
= 100 C
I
RRM
-
50
-
A
Reverse recovery time
I
F
= 25 A,
V
CC
= 500 V,
d
i
F
/
d
t = -1000 A/s
T
j
= 100 C
t
rr
-
130
-
ns
Storage time
I
F
= 25 A,
V
CC
= 500 V,
d
i
F
/
d
t = -1000 A/s
T
j
= 100 C
t
S
-
65
-
Softfaktor
I
F
= 25 A,
V
CC
= 500 V,
d
i
F
/
d
t = -1000 A/s
T
j
= 100 C
S
-
1
-
-
PDF 
ZIP