Semiconductor Group
1
Mar-28-1996
BSM 35 GB 120 DN2
IGBT Power Module
Preliminary data
Half-bridge
Including fast free-wheeling diodes
Doubled diode area
Package with insulated metal base plate
Type
V
CE
I
C
Package
Ordering Code
BSM 35 GB 120 DN2
1200V 50A
HALF-BRIDGE 1
C67070-A2111-A70
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1200
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1200
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 80 C
I
C
35
50
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 80 C
I
Cpuls
70
100
Power dissipation per IGBT
T
C
= 25 C
P
tot
280
W
Chip temperature
T
j
+ 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
0.44
K/W
Diode thermal resistance, chip case
R
thJCD
0.8
Insulation test voltage,
t
= 1min.
V
is
2500
Vac
Creepage distance
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Semiconductor Group
2
Mar-28-1996
BSM 35 GB 120 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 1.2 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 35 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 35 A,
T
j
= 125 C
V
CE(sat)
-
-
3.3
2.7
3.9
3.2
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 C
I
CES
-
-
2.4
0.6
-
1
mA
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
I
GES
-
-
150
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 35 A
g
fs
11
-
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
iss
-
2
-
nF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
oss
-
0.3
-
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
0.14
-
Semiconductor Group
3
Mar-28-1996
BSM 35 GB 120 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 35 A
R
Gon
= 39
t
d(on)
-
60
120
ns
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 35 A
R
Gon
= 39
t
r
-
60
120
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 35 A
R
Goff
= 39
t
d(off)
-
400
600
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 35 A
R
Goff
= 39
t
f
-
50
75
Free-Wheel Diode
Diode forward voltage
I
F
= 35 A,
V
GE
= 0 V,
T
j
= 25 C
I
F
= 35 A,
V
GE
= 0 V,
T
j
= 125 C
V
F
-
-
1.9
2.3
-
2.8
V
Reverse recovery time
I
F
= 35 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -800 A/s,
T
j
= 125 C
t
rr
-
0.25
-
s
Reverse recovery charge
I
F
= 35 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -800 A/s
T
j
= 25 C
T
j
= 125 C
Q
rr
-
-
5
2
-
-
C
Semiconductor Group
4
Mar-28-1996
BSM 35 GB 120 DN2
Power dissipation
P
tot
=
(T
C
)
parameter: T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
20
40
60
80
100
120
140
160
180
200
220
240
W
300
P
tot
Safe operating area
I
C
=
(V
CE
)
parameter: D = 0, T
C
= 25C , T
j
150 C
-1
10
0
10
1
10
2
10
3
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 s
t
p
= 18.0s
Collector current
I
C
=
(T
C
)
parameter: V
GE
15 V , T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
5
10
15
20
25
30
35
40
45
A
55
I
C
Transient thermal impedance IGBT
Z
th JC
=
(t
p
)
parameter: D = t
p
/ T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
5
Mar-28-1996
BSM 35 GB 120 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0
1
2
3
V
5
V
CE
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125 C
0
1
2
3
V
5
V
CE
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 s,
V
CE
= 20 V
0
2
4
6
8
10
V
14
V
GE
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
C
Semiconductor Group
6
Mar-28-1996
BSM 35 GB 120 DN2
Typ. gate charge
V
GE
=
(Q
Gate
)
parameter: I
C puls
= 35 A
0
40
80
120
160
nC
220
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V
600 V
Typ. capacitances
C
=
f
(
V
CE
)
parameter: V
GE
= 0 V, f = 1 MHz
0
5
10
15
20
25
30
V
40
V
CE
-2
10
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
Reverse biased safe operating area
I
Cpuls
= f(V
CE
)
,
T
j
= 150C
parameter: V
GE
= 15 V
0
200
400
600
800
1000 1200
V
1600
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/I
C
Short circuit safe operating area
I
Csc
= f(V
CE
) , T
j
= 150C
parameter: V
GE
= 15 V, t
SC
10 s, L < 50 nH
0
200
400
600
800
1000 1200
V
1600
V
CE
0
2
4
6
8
12
I
Csc
/I
C
Semiconductor Group
7
Mar-28-1996
BSM 35 GB 120 DN2
Typ. switching time
I = f (I
C
) , inductive load , T
j
= 125C
par.:
V
CE
= 600 V,
V
GE
= 15 V,
R
G
= 39
0
10
20
30
40
50
60
A
80
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (R
G
) , inductive load ,
T
j
= 125C
par.:
V
CE
= 600 V,
V
GE
= 15 V,
I
C
= 35 A
0
20
40
60
80
100 120 140
180
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load ,
T
j
= 125C
par.:
V
CE
= 600 V,
V
GE
= 15 V,
R
G
= 39
0
10
20
30
40
50
60
A
80
I
C
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) , inductive load , T
j
= 125C
par.:
V
CE
= 600V,
V
GE
= 15 V,
I
C
= 35 A
0
20
40
60
80
100 120 140
180
R
G
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff
Semiconductor Group
8
Mar-28-1996
BSM 35 GB 120 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter:
T
j
0.0
0.5
1.0
1.5
2.0
V
3.0
V
F
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
F
T
j
=25C
=125C
j
T
Transient thermal impedance Diode
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
9
Mar-28-1996
BSM 35 GB 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 180 g
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