Semiconductor Group
1
07/96
BUZ 310
SIPMOS
Power Transistor
N channel
Enhancement mode
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BUZ 310
1000 V
2.5 A
5
TO-218 AA
C67078-A3101-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
V
DS
1000
V
Drain-gate voltage
R
GS
= 20 k
V
DGR
1000
Continuous drain current
T
C
= 25 C
I
D
2.5
A
Pulsed drain current
T
C
= 25 C
I
Dpuls
10
Gate source voltage
V
GS
20
V
Power dissipation
T
C
= 25 C
P
tot
78
W
Operating temperature
T
j
-55 ... ...+ 150 C
Storage temperature
T
stg
-55 ... ...+ 150
Thermal resistance, chip case
R
thJC
1.6
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040
C
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Semiconductor Group
2
07/96
BUZ 310
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 C
V
(BR)DSS
1000
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
3
4
Zero gate voltage drain current
V
DS
= 1000 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 1000 V,
V
GS
= 0 V,
T
j
= 125 C
I
DSS
-
-
100
20
1000
250
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-resistance
V
GS
= 10 V,
I
D
= 1.5 A
R
DS(on)
-
4.5
5
Semiconductor Group
3
07/96
BUZ 310
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 1.5 A
g
fs
0.7
1.5
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
1600
2100
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
70
120
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
30
55
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2 A
R
GS
= 50
t
d(on)
-
30
45
ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2 A
R
GS
= 50
t
r
-
40
60
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2 A
R
GS
= 50
t
d(off)
-
110
140
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2 A
R
GS
= 50
t
f
-
60
80
Semiconductor Group
4
07/96
BUZ 310
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
I
S
-
-
2.5
A
Inverse diode direct current,pulsed
T
C
= 25 C
I
SM
-
-
10
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 6 A
V
SD
-
1.05
1.3
V
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
t
rr
-
2
-
s
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
Q
rr
-
15
-
C
5
07/96
Semiconductor Group
BUZ 310
Drain current
I
D
=
(
T
C
)
parameter:
V
GS
10 V
0
20
40
60
80
100
120
C
160
T
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
A
2.6
I
D
Power dissipation
P
tot
=
(
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
10
20
30
40
50
60
W
80
P
tot
Safe operating area
I
D
=
(
V
DS
)
parameter:
D = 0.01, T
C
= 25C
-2
10
-1
10
0
10
1
10
2
10
A
I
D
10
0
10
1
10
2
10
3
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 s
10 s
1 s
t
p
= 630.0ns
Transient thermal impedance
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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