Semiconductor Group
1
07/96
BUZ 100L
SIPMOS
Power Transistor
N channel
Enhancement mode
Avalanche-rated
Logic Level
d
v/dt rated
Ultra low on-resistance
175 C operating temperature
also in TO-220 SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BUZ 100L
50 V
60 A
0.018
TO-220 AB
C67078-S1354-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 101 C
I
D
60
A
Pulsed drain current
T
C
= 25 C
I
Dpuls
240
Avalanche energy, single pulse
I
D
= 60 A,
V
DD
= 25 V,
R
GS
= 25
L = 70 H, T
j
= 25 C
E
AS
250
mJ
Reverse diode d
v/dt
I
S
= 60 A,
V
DS
= 40 V, d
i
F
/d
t = 200 A/s
T
jmax
= 175 C
d
v/dt
6
kV/s
Gate source voltage
V
GS
14
V
Gate-source peak voltage,aperiodic
V
gs
20
Power dissipation
T
C
= 25 C
P
tot
250
W
Semiconductor Group
2
07/96
BUZ 100L
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating temperature
T
j
-55 ... + 175
C
Storage temperature
T
stg
-55 ... + 175
Thermal resistance, chip case
R
thJC
0.6
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 175 / 56
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= -40 C
V
(BR)DSS
50
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= -40 C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 C
I
DSS
-
-
-
10
1
0.1
100
100
1
A
nA
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-resistance
V
GS
= 5 V,
I
D
= 30 A
R
DS(on)
-
0.014
0.018
Semiconductor Group
3
07/96
BUZ 100L
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 30 A
g
fs
25
45
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
2800
3750
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
830
1250
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
350
525
Turn-on delay time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
t
d(on)
-
45
70
ns
Rise time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
t
r
-
140
210
Turn-off delay time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
t
d(off)
-
350
470
Fall time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3 A
R
GS
= 50
t
f
-
100
135
Semiconductor Group
4
07/96
BUZ 100L
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
I
S
-
-
60
A
Inverse diode direct current,pulsed
T
C
= 25 C
I
SM
-
-
240
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 120 A
V
SD
-
1.15
1.8
V
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
t
rr
-
85
-
ns
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
Q
rr
-
130
-
C
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