Semiconductor Group
1
07/96
BUZ 338
SIPMOS
Power Transistor
N channel
Enhancement mode
Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BUZ 338
500 V
13.5 A
0.4
TO-218 AA
C67078-S3126-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 28 C
I
D
13.5
A
Pulsed drain current
T
C
= 25 C
I
Dpuls
54
Avalanche current,limited by
T
jmax
I
AR
13.5
Avalanche energy,periodic limited by
T
jmax
E
AR
18
mJ
Avalanche energy, single pulse
I
D
= 13.5 A,
V
DD
= 50 V,
R
GS
= 25
L = 9.18 mH, T
j
= 25 C
E
AS
930
Gate source voltage
V
GS
20
V
Power dissipation
T
C
= 25 C
P
tot
180
W
Operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
0.7
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Semiconductor Group
2
07/96
BUZ 338
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 C
V
(BR)DSS
500
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
3
4
Zero gate voltage drain current
V
DS
= 500 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 500 V,
V
GS
= 0 V,
T
j
= 125 C
I
DSS
-
-
10
0.1
100
1
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-resistance
V
GS
= 10 V,
I
D
= 8.5 A
R
DS(on)
-
0.3
0.4
Semiconductor Group
3
07/96
BUZ 338
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 8.5 A
g
fs
8
15
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
2500
3325
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
320
480
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
120
180
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.9 A
R
GS
= 50
t
d(on)
-
40
60
ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.9 A
R
GS
= 50
t
r
-
100
150
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.9 A
R
GS
= 50
t
d(off)
-
450
600
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.9 A
R
GS
= 50
t
f
-
120
160
Semiconductor Group
4
07/96
BUZ 338
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
I
S
-
-
13.5
A
Inverse diode direct current,pulsed
T
C
= 25 C
I
SM
-
-
54
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 27 A
V
SD
-
1.1
1.6
V
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
t
rr
-
400
-
ns
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
Q
rr
-
6.2
-
C
5
07/96
Semiconductor Group
BUZ 338
Drain current
I
D
=
(
T
C
)
parameter:
V
GS
10 V
0
20
40
60
80
100
120
C
160
T
C
0
1
2
3
4
5
6
7
8
9
10
11
12
A
14
I
D
Power dissipation
P
tot
=
(
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
20
40
60
80
100
120
140
160
W
190
P
tot
Safe operating area
I
D
=
(
V
DS
)
parameter:
D = 0.01, T
C
= 25C
-1
10
0
10
1
10
2
10
A
I
D
10
0
10
1
10
2
10
3
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 s
10 s
t
p = 6.8s
Transient thermal impedance
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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