Semiconductor Group
1
01/97
BUZ 305
SIPMOS
Power Transistor
N channel
Enhancement mode
Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BUZ 305
800 V
7.5 A
1
TO-218 AA
C67078-S3134-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 31 C
I
D
7.5
A
Pulsed drain current
T
C
= 25 C
I
Dpuls
30
Avalanche current,limited by
T
jmax
I
AR
7.5
Avalanche energy,periodic limited by
T
jmax
E
AR
16
mJ
Avalanche energy, single pulse
I
D
= 7.5 A,
V
DD
= 50 V,
R
GS
= 25
L = 27.7 mH, T
j
= 25 C
E
AS
830
Gate source voltage
V
GS
20
V
Power dissipation
T
C
= 25 C
P
tot
150
W
Operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
0.83
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Semiconductor Group
2
01/97
BUZ 305
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 C
V
(BR)DSS
800
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
3
4
Zero gate voltage drain current
V
DS
= 800 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 800 V,
V
GS
= 0 V,
T
j
= 125 C
I
DSS
-
-
10
0.1
100
1
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-resistance
V
GS
= 10 V,
I
D
= 5 A
R
DS(on)
-
0.85
1
Semiconductor Group
3
01/97
BUZ 305
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 5 A
g
fs
2.5
7.5
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
2000
2650
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
220
330
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
130
200
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
t
d(on)
-
30
45
ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
t
r
-
120
180
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
t
d(off)
-
500
670
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
t
f
-
150
200
Semiconductor Group
4
01/97
BUZ 305
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
I
S
-
-
7.5
A
Inverse diode direct current,pulsed
T
C
= 25 C
I
SM
-
-
30
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 15 A
V
SD
-
0.95
1.4
V
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
t
rr
-
750
-
ns
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
Q
rr
-
15
-
C
5
01/97
Semiconductor Group
BUZ 305
Drain current
I
D
=
(
T
C
)
parameter:
V
GS
10 V
0
20
40
60
80
100
120
C
160
T
C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
A
8.0
I
D
Power dissipation
P
tot
=
(
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
20
40
60
80
100
120
W
160
P
tot
Safe operating area
I
D
=
(
V
DS
)
parameter:
D = 0.01, T
C
= 25C
-1
10
0
10
1
10
2
10
A
I
D
10
0
10
1
10
2
10
3
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 s
10 s
t
p
= 1000.0ns
Transient thermal impedance
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
6
01/97
BUZ 305
Typ. output characteristics
I
D
=
(
V
DS
)
parameter:
t
p
= 80 s
0
5
10
15
20
25
30
35
V
45
V
DS
0
2
4
6
8
10
12
14
A
17
I
D
V
GS
[V]
a
a
4.0
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k
10.0
l
P
tot
= 150W
l
20.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0
2
4
6
8
10
12
A
16
I
D
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.2
R
DS (on)
V
GS
[V] =
a
4.0
V
GS
[V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics
I
D
=
f (V
GS
)
parameter:
t
p
= 80 s
V
DS
2 x
I
D
x
R
DS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
1
2
3
4
5
6
7
8
9
10
11
A
13
I
D
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
t
p
= 80 s,
V
DS
2 x
I
D
x R
DS(on)max
0
2
4
6
8
A
12
I
D
0
1
2
3
4
5
6
7
8
9
10
11
12
13
S
15
g
fs
7
01/97
Semiconductor Group
BUZ 305
Gate threshold voltage
V
GS (th)
=
(
T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60
-20
20
60
100
C
160
T
j
2%
typ
98%
Drain-source on-resistance
R
DS (on)
=
(
T
j
)
parameter:
I
D
= 5 A,
V
GS
= 10 V
-60
-20
20
60
100
C
160
T
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
R
DS (on)
typ
98%
Typ. capacitances
C = f (V
DS
)
parameter:
V
GS
= 0V,
f = 1MHz
0
5
10
15
20
25
30
V
40
V
DS
2
10
3
10
4
10
5
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F
=
(
V
SD
)
parameter:
T
j
, t
p
= 80 s
-1
10
0
10
1
10
2
10
A
I
F
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
Semiconductor Group
8
01/97
BUZ 305
Avalanche energy
E
AS
=
(
T
j
)
parameter:
I
D
= 7.5 A,
V
DD
= 50 V
R
GS
= 25
,
L = 27.7 mH
20
40
60
80
100
120
C
160
T
j
0
100
200
300
400
500
600
700
mJ
900
E
AS
Typ. gate charge
V
GS
=
(
Q
Gate
)
parameter:
I
D puls
= 11 A
0
40
80
120
160
200
nC
260
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS
=
(
T
j
)
-60
-20
20
60
100
C
160
T
j
720
740
760
780
800
820
840
860
880
900
920
V
960
V
(BR)DSS
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