Semiconductor Group
1
12.96
BRT 21, BRT 22, BRT 23
SITAC
AC Switches
Without Zero Voltage Switch
AC switch with zero-voltage detector
Electrically insulated between input and output circuit
Microcomputer-compatible by very low trigger current
UL-tested (file no. E 52744), code letter "J"
Available with the following options:
Option 1: VDE 0884-approved
Option 6: Pins in 10.16 mm spacing
Option 7: Pins for sourface mounting
V
DRM
I
TRMS
d
v/dt
cr
I
FT
Opt.
Type
Ordering Code
Marking
BRT 21 H
10 kV/s
2 mA
C67079-A1020-A6
-
300 mA
400 V
BRT 21 H
BRT 21 H
300 mA
2 mA
400 V
1 + 6
10 kV/s
C67079-A1050-A16
BRT 21 H
300 mA
2 mA
BRT 22 H
BRT 22 H
600 V
-
10 kV/s
C67079-A1021-A6
BRT 22 H
10 kV/s
C67079-A1051-A5
BRT 22 H
2 mA
1
600 V
300 mA
7
600 V
BRT 22 H
2 mA
300 mA
10 kV/s
C67079-A1051-A11
BRT 22 H
C67079-A1051-A16
10 kV/s
2 mA
BRT 22 H
BRT 22 H
1 + 6
600 V
300 mA
BRT 22 H
1 + 7
600 V
2 mA
BRT 22 H
C67079-A1051-A17
10 kV/s
300 mA
BRT 22 M C67079-A1021-A10
10 kV/s
3 mA
300 mA
600 V
-
BRT 22 M
BRT 22 M
300 mA
3 mA
600 V
1
10 kV/s
C67079-A1051-A6
BRT 22 M
800 V
300 mA
2 mA
BRT 23 H
-
10 kV/s
C67079-A1022-A6
BRT 23 H
BRT 23 H
C67079-A1052-A8
BRT 23 H
800 V
300 mA
10 kV/s
2 mA
6
BRT 23 H
7
300 mA
800 V
10 kV/s
C67079-A1052-A11
BRT 23 H
2 mA
BRT 23 H
1 + 6
800 V
300 mA
10 kV/s
2 mA
BRT 23 H
C67079-A1052-A14
BRT 23 M -
800 V
300 mA
3 mA
10 kV/s
BRT 23 M C67079-A1022-A10
Information
Package
Pin Configuration
1
2
3
4
5
6
50 pcs per tube P-DIP-6
Anode
Kathode not
connected
A1
do not
connect
A2
Cathode
With Zero Voltage Switch
Semiconductor Group
2
12.96
BRT 21, BRT 22, BRT 23
Maximum Ratings, at Tj = 25 C, unless otherwise specified.
AC Switch
Parameter
Symbol
Value
Unit
Max. Power dissipation
630
mW
P
tot
Chip or operating temperature
C
T
j
-40 ...+ 100
Storage temperature
-40 ...+ 150
T
stg
Insulation test voltage
1)
between input/output circuit
(climate in acc. with DIN 40046, part2, Nov.74)
V
IS
V
RMS
5300
Reference voltage in acc. with VDE 0110 b
(insulation group C)
V
ref
V
RMS
V
DC
500
600
Creepage tracking resistance
(in acc. with DIN IEC 112/VDE 0303, part 1)
C
TI
(group IIIa
acc. to DIN
VDE 0109)
175
R
is
Insulation resistance
V
IO
= 500 V, T
A
= 25 C
V
IO
= 500 V, T
A
= 100 C
10
12
10
11
DIN humidity category, DIN 40 040
-
F
-
Creepage distance (input/output circuit)
-
7.2
mm
Clearance (input/output circuit)
-
7.2
Input Circuit
Parameter
Symbol
Unit
Value
Param VR
V
R
6
V
Continuous forward current
I
F
mA
20
1.5
Surge forward current,
I
FSM(I)
A
Max. power dissipation, t
10 s
P
tot
30
mW
Output Circuit
Parameter
Symbol
BRT
22
Unit
BRT
23
BRT
21
V
Repetitive peak off-state voltage
V
DRM
400
600
800
RMS on-state current
I
TRMS
300
mA
Single cycle surge current (50 Hz)
I
TSM(I)
3
A
Max. power dissipation
P
tot
600
mW
Tj
, t
10
s
Semiconductor Group
3
12.96
BRT 21, BRT 22, BRT 23
Characteristics
at Tj = 25 C, unless otherwise specified.
Input Circuit
Parameter
Values
Symbol
Unit
typ.
max.
min.
Forward Voltage,
I
F
= 10 mA
V
F
1.1
V
1.35
-
-
-
10
I
R
Reverse current,
V
R
= 6 V
A
Thermal resistance
2)
junction - ambient
R
thJA
-
-
750
K/W
Output Circuit
Parameter
Symbol
Values
Unit
min.
typ.
max.
Critical rate of rise of off-state voltage
V
D
= 0.67 V
DRM
, T
j
= 25 C
V
D
= 0.67 V
DRM
, T
j
= 80 C
dv/dt
cr
-
-
kV/s
-
-
10
5
10
5
dv/dt
crq
-
-
-
-
Critical rate of rise of voltage at current
communication
V
D
= 0.67 V
DRM
, T
j
= 25 C, di/dt
crq
15 A/ms
V
D
= 0.67 V
DRM
, T
j
= 80 C, di/dt
crq
15 A/ms
Critical rate of rise of on-state current
di/dt
cr
-
8
A/s
-
Pulse current
tp
5 s, f = 100 , di
tp
/dt
8 A/s
I
tp
-
A
2
-
On-state voltage,
I
T
= 300 mA
V
V
T
-
2.3
-
I
D
-
-
Off-state current
T
C
= 25 C, V
DRM
T
C
= 80 C, V
DRM
7
12
30
1000
A
Holding current,
V
D
= 10 V
I
H
500
80
-
Thermal resistance
2)
junction - ambient
R
thJA
-
-
125
K/W
Tj
t
p
5
s, f = 100 Hz, di
tp
/dt
8 A/ms
100
commutation
V
D
= 0.67 V
DRM
, T
j
= 25
C, di/dt
crq
15 A/ms
V
D
= 0.67 V
DRM
, T
j
= 80
C, di/dt
crq
15 A/ms
Semiconductor Group
4
12.96
BRT 21, BRT 22, BRT 23
Response Characteristics
at T
j
= 25 C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
typ.
min.
0.4
0.4
-
-
mA
I
FT1
Trigger current 1
V
D
= 6 V
type H
type M
2
3
-
-
I
FT2
Trigger current 2
V
op
= 220 V,
= 50 Hz,T
j
= 100C
t
pF
> 10 ms
type H
type M
6
9
-
-
A/K
Trigger current temperature gradient
14
I
FT1
/
T
j
I
FT2
/
T
j
7
-
Inhibit voltage, I
F
= I
FT1
V
DINH
-
V
12
8
-
Inhibit voltage temperature gradient
mV/K
V
DINH
/
T
j
-20
-
Off-state current in inhibit state
I
F
= I
FT1
, V
DRM
I
DINH
-
200
A
50
2
Capacitance between input and output circuit
V
R
= 0 V, f = 1 kHz
C
IO
-
pF
-
1) Static air, SITAC soldered in pcb or base plate.
2) Test AC voltage in acc. with DIN 57883, June 1980.
3) The SITAC switch is soldered in pcb or base plate.
4) Termocouple measurement has to be performed potentially separated to A1 and A2.
The measuring junction should be as near as possible at the case.
5) The SITAC zero voltage switch can be triggered only in the hatched area below the
T
j
curves.
7
Semiconductor Group
5
12.96
BRT 21, BRT 22, BRT 23
Characteristics
at Tj = 25 C, unless otherwise specified.
Typical input characteristics
I
F
=
(
V
F
)
Typical output characteristics
I
T
=
(
V
T
)
Current reduction
I
TRMS
=
(
T
PIN5
)
R
thJ-PIN5
= 16,5 K/W
4)
Current reduction
I
TRMS
=
(
T
A
)
R
thJA
= 125 K/W
3)
Tj
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