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Электронный компонент: CGY181

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GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/14
01.02.96
HL EH PD 21
Preliminary Datasheet
* Power amplifier for PCN/PCS applications
* Fully integrated 2 stage amplifier
* Operating voltage range: 2.7 to 6 V
* Overall power added efficiency 35 %
* Input matched to 50
, simple output match
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(8-mm taped)
Package 1)
CGY 181
CGY 181
Q68000-A8883
MW 12
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
VD
9
V
Negative supply voltage
2
)
VG
-8
V
Supply current
ID
2
A
Channel temperature
TCh
150
C
Storage temperature
Tstg
-55...+150
C
RF input power
Pin
25
dBm
Total power dissipation
(Ts
81 C)
Ts: Temperature at soldering point
Ptot
5
W
Thermal Resistance
Channel-soldering point
RthChS
14
K/W
1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines
2) V
G
= -8V only in combination with V
TR
= 0V; V
G
= -6V while V
TR
0V
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 2/14
01.02.96
HL EH PD 21
Functional block diagramm:
Short description of CGY181
operation:
A negative voltage between -4V to -6V
(stabilization not necessary) has to be
connected to the VG-pin, a positive
supply voltage has to be applied to the
VD-pins.
The VTR-pin has to switched to 0V
(GND) during transmit operation. The
MMIC CGY181 is self-biased, the
operating current is adjusted by the
internal control circuit.
In receive mode the VTR-pin is not
connected (shut off mode).
Pin #
Configuration
1
VG
Negative voltage at control circuit (-4V...-8V)
2
VTR
Control voltage for transmit mode (0V) or receive mode (open)
3,4,5,10
GND 2
RF and DC ground of the 2nd stage
6,9
GND 1
RF and DC ground of the 1st stage
7
VD1
Positive drain voltage of the 1st stage
8
RFin
RF input power
11
VD2,RFout
Positive drain voltage of the 2nd stage, RF output power
12
-
not connected
DC characteristics
Characteristics
Symbol Conditions
min
typ
max
Unit
Drain current stage 1
IDSS1
VD=3V, VG=0V, VTR n.c.
0.6
0.9
1.2
A
stage 2
IDSS2
2.4
3.5
4.8
A
Drain current with
active current control
ID
VD=3V, VG=-4V, VTR=0V
1.0
A
Transconductance
gfs1
VD=3V, ID=350mA
0.28
0.32
-
S
(stage 1 and 2)
gfs2
VD=3V, ID=700mA
1.1
1.3
-
S
Pinch off voltage
Vp
VD=3V, ID<500
A
(all stages)
-3.8
-2.8
-1.8
V
Pin (8)
Pout (11)
GND1 (6,9)
GND2
VD1 (7)
VD2 (11)
VG (1)
Control
Circuit
VTR (2)
(3, 4, 5, 10)
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 3/14
01.02.96
HL EH PD 21
Electrical characteristics
(TA = 25C , f=1.75 GHz, ZS=ZL=50 Ohm, VD=3.6V, VG =-4V, VTR pin connected to
ground, unless otherwise specified)
Characteristics
Symbol
min
typ
max
Unit
Supply current
Pin= 0 dBm
IDD
-
1.2
-
A
Negative supply current
(normal operation)
IG
-
2
3
mA
Shut-off current
VTR n.c.
ID
-
400
-
A
Negative supply current
(shut off mode, VTR pin n.c.)
IG
-
10
-
A
Small signal gain
Pin = -5dBm
G
-
20.5
-
dB
Power Gain
VD=3.6V, Pin = 16 dBm
G
14.5
15.5
-
dB
Power Gain
VD=5V, Pin = 16 dBm
G
17.5
18.5
-
dB
Output Power
VD=3.6V, Pin = 16 dBm
P0
30.5
31.5
-
dBm
Output Power
VD=5V , Pin = 16 dBm
P0
33.5
34.5
-
dBm
Overall Power Added Efficiency
VD=3.6V, Pin = 16 dBm
-
37
-
%
Overall Power Added Efficiency
VD=5V, Pin = 16 dBm
-
35
-
%
Harmonics (Pin =16dBm) 2f0
VD=3.6V (Pout=31.85dBm) 3f0
-
-
-44.8
-70
-
-
dBc
Harmonics (Pin =16dBm) 2f0
VD=5V (Pout=31.85dBm) 3f0
-45.1
-75
dBc
Input VSWR VD=3.6V
1.9:1
Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; V
D
= 3.6V
IP3
41
dBm
Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; V
D
= 5V
IP3
44
dBm
All RF-measurements were done in a pulsed mode with a duty cycle of 10% (ton=0.33ms)!
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 4/14
01.02.96
HL EH PD 21
DC-ID(VG) characteristics -
typical values of stage 1, VD=3V
0
0,2
0,4
0,6
0,8
1
1,2
-5
-4,5
-4
-3,5
-3
-2,5
-2
-1,5
-1
-0,5
0
VG [V]
ID [A]
High current
Medium current
Low current
DC-Output characteristics -
typical values of stage 1
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
5,5
6
VD [V]
ID [A]
VG=-0.25 V
-0.50 V
-1.50 V
-1.25 V
-1.00 V
-0.75 V
-2.00 V
-1.75 V
-2.25 V
Ptot=1.25 W
Pin 2 ( V
TR
) has to be open during measuring DC-characteristics!
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 5/14
01.02.96
HL EH PD 21
DC-ID(VG) characteristics -
typical values of stage 2, VD=3V
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
-5
-4,5
-4
-3,5
-3
-2,5
-2
-1,5
-1
-0,5
0
VG [V]
ID [A]
High current
Medium current
Low current
DC-Output characteristics -
typical values of stage 2
0
0,5
1
1,5
2
2,5
3
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
5,5
6
VD [V]
ID [A]
VG=-0.50 V
-0.75 V
-2.00 V
-1.75 V
-1.50 V
-1.25 V
-1.00 V
-2.50 V
-2.25 V
Ptot=3.75 W
Pin 2 ( V
TR
) has to be open during measuring DC-characteristics!