GaAs MMIC

CGY92

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Siemens Aktiengesellschaft

pg. 1/14

17.10.95

HL EH PD 21

Datasheet

*Power amplifier for GSM or AMPS application
*Fully integrated 2 stage amplifier
*Operating voltage range: 2.7 to 6 V
*Overall power added efficiency 45 %
*Input matched to 50 ohms, simple output match

ESD:

Electrostatic discharge sensitive device,
observe handling precautions!

Type

Marking

Ordering code

(taped)

Package 1)

CGY 92

Q68000-A8884

MW 12

Maximum ratings

Characteristics

Symbol

max. Value

Unit

Positive supply voltage

Negative supply voltage

-6

Supply current

Channel temperature

TCh

150

癈

Storage temperature

Tstg

-55...+150

癈

RF input power

dBm

Pulse peak power dissipation

duty cycle 12.5%, ton=0.577ms

PPulse

Total power dissipation

(CW, Ts

81癈)

Ts: Temperature at soldering point

Ptot

Thermal Resistance

Channel-soldering point

RthChS

K/W

1) Plastic body identical to SOT 223, dimensions see page 14

GaAs MMIC

CGY92

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HL EH PD 21

Functional block diagramm:

Control circuit:

The drain current ID of the CGY 92 is
adjusted by the internal control circuit.
Therefore a negativ voltage (-4V...-6V)
has to be supplied at VG. For transmit
operation VTR must be set to 0V. During
receive operation VTR should be dis-
connected (shut off mode).

Pin #

Configuration

Negative voltage at control circuit (-4V...-6V)

VTR

Control voltage for transmit mode (0V) or receive mode (open)

3,4,5,10

GND 2

RF and DC ground of the 2nd stage

6,9

GND 1

RF and DC ground of the 1st stage

VD1

Positive drain voltage of the 1st stage

RFin

RF input power

GND 3

Ground for internal output matching

VD2, RFout

Positive drain voltage of the 2nd stage, RF output power

DC characteristics

Characteristics

Symbol Conditions

min

typ

max

Unit

Drain current stage 1

IDSS1

VD=3V, VG=0V, VTR n.c.

0.6

0.9

1.2

stage 2

IDSS2

2.4

3.5

4.8

Drain current with
active current control

VD=3V, VG=-4V, VTR=0V

1.0

Transconductance

gfs1

VD=3V, ID=350mA

0.28

0.32

(stage 1 and 2)

gfs2

VD=3V, ID=700mA

1.1

1.3

Pinch off voltage

VD=3V, ID<500

�

(all stages)

-3.8

-2.8

-1.8

Pin (8)

Pout (12)

GND1 (6, 9)

GND2

VD1 (7)

VD2 (12)

VG (1)

GND3 (11)

Control

Circuit

VTR (2)

(3, 4, 5, 10)

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

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pg. 3/14

17.10.95

HL EH PD 21

Electrical characteristics

(TA = 25癈 , f=0.9 GHz, ZS=ZL=50 Ohm, VD=3.0V, VG=-4V, VTR pin connected to

ground, unless otherwise specified, pulsed with a duty cycle of 10%, ton=0.33ms)

Characteristics

Symbol

min

typ

max

Unit

Supply current

Pin=10dBm

IDD

1.05

Negative supply current

(normal operation)

Shut-off current

VTR n.c.

400

礎

Negative supply current

(shut off mode, VTR pin n.c.)

礎

Small signal gain

Pin = -5dBm

27.0

29.0

Power gain

VD=3V; Pin=10dBm

21.0

21.8

Output Power

VD=3V; Pin=10dBm

31.0

31.8

dBm

Output Power

VD=3.6V; Pin=10dBm

32.3

33.1

dBm

Output Power

VD=5V; Pin=10dBm

34.0

35.0

dBm

Overall Power added Efficiency

VD=3V; Pin=10dBm

Overall Power added Efficiency

VD=3.6V; Pin=10dBm

Overall Power added Efficiency

VD=5V; Pin =10dBm

Harmonics

(Pin=10dBm)

VD=3V; (Pout=32dBm)

-
-

-46
-37

-
-

dBc
dBc

Harmonics

(Pin=10dBm)

VD=5V; (Pout=35dBm)

-
-

-48
-38

-
-

dBc
dBc

Input VSWR

VD=3.0V;

1.7 : 1

2.0 : 1

Third order intercept point

VD=3V; pulsed with a duty cycle of 10%;
f

=900.00MHz; f

=900.20MHz;

dBm

Third order intercept point

VD=4.8V; pulsed with a duty cycle of 10%;
f

=900.00MHz; f

=900.20MHz;

dBm

GaAs MMIC

CGY92

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Siemens Aktiengesellschaft

pg. 4/14

17.10.95

HL EH PD 21

DC-ID(VG) characteristics -

typical values of stage 1, VD=3V

0,2

0,4

0,6

0,8

1,2

-5

-4,5

-4

-3,5

-3

-2,5

-2

-1,5

-1

-0,5

VG [V]

ID [A]

High current

Medium current

Low current

DC-Output characteristics -

typical values of stage 1

0,1

0,2

0,3

0,4

0,5

0,6

0,7

0,8

0,5

1,5

2,5

3,5

4,5

5,5

VD [V]

ID [A]

VG=-0.25 V

-0.50 V

-1.50 V

-1.25 V

-1.00 V

-0.75 V

-2.00 V

-1.75 V

-2.25 V

Ptot=1.25 W

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 5/14

17.10.95

HL EH PD 21

DC-ID(VG) characteristics -

typical values of stage 2, VD=3V

0,5

1,5

2,5

3,5

4,5

-5

-4,5

-4

-3,5

-3

-2,5

-2

-1,5

-1

-0,5

VG [V]

ID [A]

High current

Medium current

Low current

DC-Output characteristics -

typical values of stage 2

0,5

1,5

2,5

0,5

1,5

2,5

3,5

4,5

5,5

VD [V]

ID [A]

VG=-0.50 V

-0.75 V

-2.00 V

-1.75 V

-1.50 V

-1.25 V

-1.00 V

-2.50 V

-2.25 V

Ptot=3.75 W

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 6/14

17.10.95

HL EH PD 21

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

Pout and PAE vs. Pin

(VD=3V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms )

-5

Pin [dBm]

Pout [dBm]

PAE [%]

Pout [dBm]

AAAA

PAE [%]

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

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AAAA

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AAAA

AAA

AAAA

AAA

AAAA

AAA

AAAA

Pout and PAE vs. Pin

(VD=5V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms )

-5

Pin [dBm]

Pout [dBm]

PAE [%]

Pout [dBm]

AAAAAAAAA

PAE [%]

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 7/14

17.10.95

HL EH PD 21

Output power at different temperatures

(VD=3V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms)

-6

-5

-4

-3

-2

-1

10 11 12 13 14 15

Pin [dBm]

Pout [dBm]

T=-20癈

T=+20癈

T=+70癈

Power added efficiency at different temperatures

(VD=3V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms)

-6

-5

-4

-3

-2

-1

10 11 12 13 14 15

Pin [dBm]

PAE [%]

T=-20癈

T=+20癈

T=+70癈

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 8/14

17.10.95

HL EH PD 21

Measured S-parameter at VD=3V and Pin=9dBm

(VG=-4V, VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)

-20

-15

-10

-5

750

760

770

780

790

800

810

820

830

840

850

860

870

880

890

900

910

920

930

940

950

f [MHz]

Mag [dB]

MAG(s11)

MAG(s21)

Measured S-parameter at VD=5V and Pin=9dBm

(VG=-4V, VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)

-20

-15

-10

-5

750

760

770

780

790

800

810

820

830

840

850

860

870

880

890

900

910

920

930

940

950

f [MHz]

Mag [dB]

MAG(s11)

MAG(s21)

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 9/14

17.10.95

HL EH PD 21

Output power vs. drain voltage

(Pin=10dBm, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms)

3,0

3,5

4,0

4,5

5,0

5,5

6,0

VD [V]

Pout [dBm]

Performance of internal bias control circuit @VD=3V

(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

5,0

5,5

6,0

-VG [V]

ID [A]

High current

Medium current

Low current

Performance of internal bias control circuit @VD=5V

(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

5,0

5,5

6,0

-VG [V]

ID [A]

High current

Medium current

Low current

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 11/14

17.10.95

HL EH PD 21

Test circuit board:

Note:

By changing the position of the
6.8 pF capacitor at pin # 12 it is
possible to tune the board for
max. Pout or max. PAE. To
achieve the maximum output
power place the capacitor close
to the CGY92. For a better PAE
increase the distance between
the capacitor and the CGY92
device (2-5mm).

Principal circuit:

Pin (8)

Pout (12)

GND1 (6, 9)

GND2

VD1 (7)

VD2 (12)

VG (1)

GND3 (11)

Control

Circuit

VTR (2)

(3, 4, 5, 10)

1nF

4.7uF

1nF

43nH

6.8pF

VTR

+VD

OUT

2) Coilcraft SMD Spring Inductor

distribution by Ginsbury Electronic GmbH, Am Moosfeld 85 D-81829 M黱chen, Tel. 089/45170-223

43nH

size: 30 x 26 mm

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

Siemens Aktiengesellschaft

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17.10.95

HL EH PD 21

Emissions due to GMSK modulation:

Measurement was done with the following equipment:

Generator

Spectrum

Analyzer

HP 8561E

Trigger

gate delay 150us
gate length 75us

VTR

OUT

-4V

Pulsed Power

Supply

VD=3V
pulsed with a duty cycle of 10%

negative supply

voltage

CGY92

ton=0.33ms

Pin=8dBm

GSM Signal

ROHDE&SCHWARZ SME03

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

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pg. 13/14

17.10.95

HL EH PD 21

APPLICATION - HINTS

1. CW - capability of the CGY92

Proving the possibility of CW - operation there must be known the total power dissipation of the

device. This value can be found as a function of the temperature in the datasheet (page 10). The

CGY92 has a maximum total power dissipation of Ptot = 5 W.
As an example we take the operating point with a drain voltage VD = 3 V and a typical drain current
of ID=1.0 A. So the maximum DC - power can be calculated to:

= =

This value is smaller than 5 W and CW - operation is possible.

By decoupling RF power out of the CGY92 the power dissipation of the device can be further

reduced. Assuming a power added efficiency (PAE) of 40 % the total power dissipation Ptot can be
calculated using the following formula:

PAE

tot

(

)

(

)

1 0 40

1 8

2. Operation without using the internal current control

If you don' t want to use the internal current control, it is recommended to connect the negative

supply voltage at pin 1 (VTR) instead of pin 2 (VG). In that case VG is not connected.

3. Biasing and use considerations

Biasing should be timed such that gate voltage (VG) is always applied before the drain voltage (VD),
and when returning to the standby mode, gate voltage should only be removed once the drain

voltage have been removed.

GaAs MMIC

CGY92

_____________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 14/14

17.10.95

HL EH PD 21

Published by Siemens AG, Bereich Bauelemente, Vertrieb,
Produkt-Information, Balanstra遝 73, D-81541 M黱chen

�

As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits implemented
within components or assemblies.

The information describes the type of component and shall
not be considered as assured characteristics.

Terms of delivery and rights to change design reserved.

For questions on technology, delivery and prices please contact
the Offices of Semiconductor Group in Germany or the
Siemens Companies and Representatives world-wide
(see address list).

Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Siemens Office,
Semiconductor Group.

Siemens AG is an approved CECC manufacturer.

协谢械泻褌褉芯薪薪褘泄 泻芯屑锌芯薪械薪褌: CGY92

协谢械泻褌褉芯薪薪褘泄泻芯屑锌芯薪械薪褌: CGY92