51
FEATURES
High Current Transfer Ratio
CNY17F-1, 40-80%
CNY17F-2, 63-125%
CNY17F-3, 100-200%
CNY17F-4, 160-320%
Breakdown Voltage, 5300 VAC
RMS
High Collector-Emitter Voltage
V
CEO
=70 V
No Base Terminal Connection for Improved
Common Mode Interface Immunity
Field-Effect Stable by TRIOS*
Long Term Stability
Industry Standard Dual-in-Line Package
Underwriters Lab File #E52744
VDE #0884, Available with Option 1
Maximum Ratings
(T
A
=25
C)
Emitter
Reverse Voltage ................................................ 6 V
DC Forward Current .................................... 60 mA
Surge Forward Current (t
10
s) ...................2.5 A
Total Power Dissipation ............................ 100 mW
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ..........................................50 mA
Collector Current (t
1 ms) ......................... 100 mA
Total Power Dissipation ............................ 150 mW
Package
Isolation Test Voltage (between emitter and detector
referred to standard climate 23/50
DIN 50014) .................................... 5300 VAC
RMS
Creepage .................................................... >7 mm
Clearance................................................... >7 mm
Isolation Thickness between Emitter
and Detector.........................................
0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ...................... 175
Isolation Resistance (V
10
=500 V)
.................
10
11
Storage Temperature Range ............55 to +150
C
Ambient Temperature Range ...........55 to +100
C
Junction Temperature ................................... 100
C
Soldering Temperature
(max. 10 s, dip soldering:
distance to seating plane
1.5 mm) .......... 260
C
*
TRIOS--TR
ansparent
IO
n
Sh
ield
V
D E
DESCRIPTION
The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared
emitting diode optically coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission between two
electrically separated circuits. The potential difference between the cir-
cuits to be coupled is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of the F type is not
connected, resulting in a substantially improved common-mode interfer-
ence immunity.
Characteristics
(T
A
=25
C)
Symbol
Unit
Condition
Emitter
Forward Voltage
V
F
1.25 (
1.65)
V
I
F
=60mA
Breakdown Voltage
V
BR
6
V
I
R
=10
A
Reverse Current
I
R
0.01 (
10)
A
V
R
=6 V
Capacitance
C
O
25
pF
V
R
=0 V, f=1 MHz
Thermal Resistance
R
thJA
750
K/W
Detector
Capacitance
C
CE
5.2
pF
V
CE
=5 V, f=1
MHz
Thermal Resistance
R
thJA
500
K/W
Package
Saturation Voltage,
Collector-Emitter
V
CEsat
0.25 (
0.4)
V
I
F
=10 mA
I
C
=2.5 mA
Coupling
Capacitance
C
C
0.6
pF
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID
6
5
4
1
2
3
18
typ.
.300 (7.62)
.347 (8.82)
4
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
CNY17F SERIES
PHOTOTRANSISTOR
NO BASE CONNECTION
OPTOCOUPLER
52
CNY17F
Figure 3. Current transfer ratio versus diode
current
(T
A
=25
C, V
CE
=5 V) I
C
/I
F
=f (I
F
)
Figure 4. Current transfer ratio versus diode
current
(T
A
=0
C, V
CE
=5 V) I
C
/I
F
=f (I
F
)
Figure 5. Current transfer ratio versus diode
current
(T
A
=25
C, V
CE
=5 V) I
C
/I
F
=f (I
F
)
Current Transfer Ratio
(I
C
/I
F
at V
CE
=5 V, 25
C)
and Collector-Emitter Leakage Current by dash number
Figure 1. Linear operation
(without saturation)
I
F
=10 mA, V
CC
=5 V, T
A
=25
C
Figure 2. Switching operation
(with saturation)
-1
-2
-3
-4
Unit
I
C
/I
F
at V
CE
=5 V
(I
F
=10 mA)
4080
63-125
100200
160320
%
I
C
/I
F
at V
CE
=5 V
(I
F
=1 mA)
30 (>13)
45 (>22)
70 (>34)
90 (>56)
%
Collector-Emitter
Leakage Current
(V
CE
=10 V) (I
CEO
)
2 (
50)
2 (
50)
5 (
100)
5 (
100)
nA
Load Resistance
R
L
75
Turn-On Time
t
ON
3.0
s
Rise Time
t
R
2.0
s
Turn-Off Time
t
OFF
2.3
s
Fall Time
t
f
2.0
s
Cut-Off Frequency
f
CO
250
kHz
-1
(I
F
=20 mA)
-2 and -3
(I
F
=10 mA)
-4
(I
F
=5 mA)
Turn-On Time
t
ON
3.0
4.2
6.0
s
Rise Time
t
R
2.0
3.0
4.6
s
Turn-Off Time
t
OFF
18
23
25
s
Fall Time
t
F
11
14
15
s
R
L
=75
V
CC
=5 V
I
C
47
I
F
I
F
1 K
V
CC
=5 V
47
53
CNY17F
Figure 12. Saturation voltage current
and modulation CNY17F-1
V
CEsat
=f (I
C
) (T
A
=25
C)
Figure 13. Saturation voltage versus
collector current and modulation depth
CNY17F-2 V
CEsat
=f (I
C
) (T
A
=25
C)
Figure 14. Saturation voltage versus
collector current and modulation depth
CNY17F-3 V
CEsat
=f (I
C
) (T
A
=25
C)
Figure 9. Output characteristics
CNY17F-2, -3 (T
A
=25
C) IC=f(V
CE
)
Figure 10. Forward voltage V
F
=f(I
F
)
Figure 11. Collector emitter off-state
current I
CEO
=f(V,T) (T
A
=75
C, I
F
=0)
Figure 6. Current transfer ratio versus
diode current (T
A
=50
C) V
CE
=5 V
Figure 7. Current transfer ratio versus
diode current (T
A
=75
C) V
CE
=5 V
Figure 8. Current transfer ratio versus
temperature (I
F
=10 mA, V
CE
=5 V)
I
C
/I
F
=f (T)
54
CNY17F
Figure 19. Transistor capacitance
C=f(V
O
)(T
A
=25
C, f=1 MHz)
Figure 17. Permissible power dissipa-
tion transistor and diode P
tot
=f(T
A
)
Figure 18. Permissible forward current
diode I
F
=f(T
A
)
Figure 15. Saturation voltage versus
collector current and modulation depth
CNY17F-4 V
CEsat
=f (I
C
) (T
A
=25
C)
Figure 16. Permissible pulse load
D=parameter, T
A
=25
C, I
F
=f(t
p
)
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