Semiconductor Group
1
07.96
The differential magnetoresistive sensor FP 201 D 250-22 consists of two series coupled
D-type InSb/NiSb semiconductor resistors. The resitance value of the MRs, which are
mounted onto an insulated ferrite substrate, can be magnetically controlled. The sensor
is encapsuled in a plastic package with three in-line contacts extending from the base.
The basic resistance of the total system in the unbiased state is 2
250
. A permanent
magnet which supplies a biasing magnetic field is built into the housing.
Type
Ordering Code
FP 210 D 250-22
Q65210-D250-W5
Differential Magnetoresistive Sensor
FP 210 D 250-22
Dimensions in mm
Features
High operating
temperature
High output voltage
Robust cylindrical
housing
Biasing magnet build in
Signal amplitude
independent of speed
Easily connectable
Typical applications
Detection of speed
Detection of position
Detection of sense of
rotation
Angle encoder
Linear position sensing
Semiconductor Group
2
FP 210 D 250-22
Maximum ratings
Characteristics (
T
A
= 25
C)
Measuring arrangements
By approaching a soft iron part close to the sensor a change in its resistance is obtained.
The potential divider circuit of the magneto resistor causes a reduction in the
temperature dependence of the output voltage
V
OUT
.
Parameter
Symbol
Value
Unit
Operating temperature
T
A
40 / + 140
C
Storage temperature
T
stg
40 / + 150
C
Power dissipation
1)
P
tot
400
mW
Supply voltage
2)
V
IN
7.5
V
Insulation voltage between
terminals and casing
V
I
> 100
V
Thermal conductivity
G
thA
5
mW/K
Nominal supply voltage
V
IN N
5
V
Total resistance, (
=
,
I
1 mA)
R
1-3
1000
...
1600
Center symmetry
3)
(
=
)
M
10
%
Offset voltage
4)
(at
V
IN N
and
=
)
V
0
130
mV
Open circuit output voltage
5)
(at
V
IN N
and
= 0.2 mm)
V
out pp
> 1100
mV
Cut-off frequency
f
c
> 20
kHz
1) Corresponding to diagram
P
tot
=
f
(
T
A
)
2) Corresponding to diagram
V
IN
=
f(T
A
)
3)
4) Corresponding to measuring circuit in Fig. 2
5) Corresponding to measuring circuit in Fig. 2 and arrangement as shown in Fig.
1
M
R
1
2
R
2
3
----------------------------
=
100% for
R
1-2
>
R
2-3
R
1
2
Semiconductor Group
3
FP 210 D 250-22
1. Digital revolution counting
For digital revolution counting, the sensor should be actuated by a magnetically soft iron
toothed wheel. The tooth spacing should correspond to about twice the magneto resistor
intercenter spacing (see Fig. 1).
The two resistors of the sensor are supplemented by two additional resistors in order to
obtain the sensor output voltage as a bridge voltage
V
OUT
. The output voltage
V
OUT
without excitation then is 0 V when the offset is compensated.
Fig. 1
Schematic representation of a toothed wheel actuating an FP 210 D 250-22
Fig. 2
Measuring circuit and output voltage
V
OUT
waveform
Semiconductor Group
4
FP 210 D 250-22
2. Linear distance measurement
To convert small distances into a proportional electric signal, a small soft iron part of
definite width (e.g.
b
= 1.8 mm) is moved over the face of the sensor.
Proportional signals for distances up to 1.5 mm can be obtained in this way. The
sinusoidal output signal gives a voltage proportional to distance in the zero crossover
region (see Fig. 3).
Fig. 3
Arrangement for analogue application
Maximum supply voltage
versus temperature
V
IN
=
f
(
T
A
),
=
Semiconductor Group
5
FP 210 D 250-22
Output voltage (typical) versus
temperature
V
OUTpp
=
f
(
T
A
),
= 0.2 mm
V
OUTpp
at
T
A
= 25
C
100%
Total resistance (typical)
versus temperature
R
1-3
=
f
(
T
A
),
=
^
=
Output voltage (typical) versus
airgap
V
OUTpp
=
f
(
),
T
A
= 25
C
V
OUTpp
at
= 0.2 mm
100%
Max. power dissipation
versus temperature
P
tot
=
f
(
T
A
),
=
^
=
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