Semiconductor Group
1
07.96
Double Differential Magneto Resistor
FP 410 L (4
x
80) FM
Dimensions in mm
Features
Double differential magneto resistor
on same carrier
Accurate intercenter spacing
High operating temperature range
High output voltage
Compact construction
Available in strip form for automatic
assembly
Type
Ordering Code
FP 410 L (4
80) FM
Q65410-L80E (taped)
FP 410 L (4
80) FM
Q65110-L80F (singular)
Typical applications
Incremental angular encoders
Detection of sense of rotation
Detection of speed
Detection of position
Semiconductor Group
2
FP 410 L (4
x
80) FM
The double differential magneto resistor assembly consists of two pairs of magneto
resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be
magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto
resistors is achieved using a copper/polyimide carrier film known as Micropack.
The basic resistance of each of the magnetic resistors is 80
. The two series coupled
pairs of magnetic resistors are actuated by an external magnetic field or can be biased
by a permanent magnet and actuated by a soft iron target.
Semiconductor Group
3
FP 410 L (4
x
80) FM
Maximum ratings
Characteristics (
T
A
= 25
C)
Parameter
Symbol
Value
Unit
Operating temperature
T
A
40 / + 175
C
Storage temperature
T
stg
40 / + 185
C
Power dissipation
1)
P
tot
1000
mW
Supply voltage
2)
(
B
= 0.3 T)
V
IN
8
V
Thermal conductivity
attached to heatsink
in still air
G
th case
G
th A
20
2
mW/K
Basic resistance
(
I
1 mA;
B
= 0 T)
R
01-3
R
04-6
110
...
220
Center symmetry
3)
M
6
%
Relative resistance change
(
R
=
R
01-3
,
R
04-6
at
B
= 0 T)
B
=
0.3 T
4)
B
=
1 T
R
B
/
R
0
> 1.7
> 7
Temperature coefficient
B
= 0 T
B
=
0.3 T
B
=
1 T
TC
R
0.16
0.38
0.54
%/K
%/K
%/K
1) Corresponding to diagram
P
tot
=
f
(
T
case
)
2) Corresponding to diagram
V
IN
=
f
(
T
case
)
3)
4) 1 T = 1 Tesla = 10
4
Gauss
M
R
01
2
R
02
3
--------------------------------
=
100% for
R
01-2
>
R
02-3
R
01
2
M
R
04
5
R
05
6
--------------------------------
=
100% for
R
04-5
>
R
05-6
R
04
5
Semiconductor Group
4
FP 410 L (4
x
80) FM
Max. power dissipation versus
temperature
P
tot
=
f
(
T
),
T
=
T
case
,
T
A
Typical MR resistance
versus temperature
R
01-3, 4-6
=
f
(
T
A
),
B
= Parameter
Maximum supply voltage
versus temperature
V
IN 1-3, 4-6
=
f
(
T
),
B
= 0.3 T
Typical MR resistance
versus magnetic induction
B
R
01-3, 4-6
=
f
(
B
),
T
A
= 25
C
PDF 
ZIP