Semiconductor Group
1
07.96
Differential Magneto Resistor
FP 425 L 90
Dimensions in mm
Features
Double differential magneto resistor on one carrier
Accurate intercenter spacing
High operating temperature range
High output voltage
Compact construction
Available in strip form for automatic assembly
Optimized intercenter spacing on modules
m
= 0.5 mm
Reduced temperature dependence of offset
voltage
Typical applications
Incremental angular encoders
Detection of sense of rotation
Detection of speed
Detection of position
Semiconductor Group
2
FP 425 L 90
The double differential magneto resistor assembly consists of two pairs of magneto
resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be
magnetically controlled), which are fixed to a silicon substrate. Contact to the magneto
resistors is achieved using a copper/polyimide carrier film known as TAB.
The basic resistance of each of the magneto resistors is 90
. The two series coupled
pairs of magneto resistor are actuated by an external magnetic field or can be biased by
a permanent magnet and actuated by a soft iron target.
Type
Ordering Code
FP 425 L 90
Q65425-L90 (singular)
FP 425 L 90
Q65425-L0090E001 (taped)
Semiconductor Group
3
FP 425 L 90
Maximum ratings
Characteristics (
T
A
= 25
C)
Parameter
Symbol
Value
Unit
Operating temperature
T
A
40 / + 175
C
Storage temperature
T
stg
40 / + 185
C
Power dissipation
1)
P
tot
800
mW
Supply voltage (
B
= 0.2 T,
T
A
= 25
C)
V
IN
8
V
Thermal conductivity
attached to heatsink
in still air
G
thcase
G
thA
20
2
mW/K
mW/K
Nominal supply voltage (
B
= 0.2 T)
2)
V
INN
5
V
Basic resistance
(
I
< 1 mA,
B
= 0 T)
R
01-3
160 280
Center symmetry
3)
M
3
%
Relative resistance change
(
R
0
=
R
01-3
,
R
04-6
at
B
= 0 T)
B
=
0.3 T
4)
B
=
1 T
R
B
/
R
0
> 1.7
> 7
Temperature coefficient
B
= 0 T
B
=
0.3 T
B
=
1 T
TC
R
0.16
0.38
0.54
%/K
%/K
%/K
1)
T
=
T
case
2)
T
=
T
case
, T
< 80
C
3)
4) 1 T = 1 Tesla = 10
4
Gauss
M
R
01
2
R
02
3
--------------------------------
=
100% for
R
01-2
>
R
02-3
R
01
2
M
R
04
5
R
05
6
--------------------------------
=
100% for
R
04-5
>
R
05-6
R
04
5
Semiconductor Group
4
FP 425 L 90
Max. power dissipation versus
temperature
P
tot
=
f
(
T
),
T
=
T
case
,
T
A
Typical MR resistance
versus temperature
R
01-3, 4-6
=
f
(
T
A
),
B
= Parameter
Maximum supply voltage
versus temperature
V
IN
=
f
(
T
),
B
= 0.2 T
Typical MR resistance
versus magnetic induction
B
R
01-3, 4-6
=
f
(
B
),
T
A
= 25
C
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