51
FEATURES
Alternate Source to TLP621-2/-4 and
TLP621GB-2/-4
Current Transfer Ratio (CTR) at I
F
= 5 mA
ILD/Q621: 50% Min.
ILD/Q621GB: 100% Min.
Saturated Current Transfer Ratio (CTR
SAT
)
at I
F
=1 mA
ILD/Q621: 60% Typ.
ILD/Q621GB: 30% Min.
High Collector-Emitter Voltage, BV
CEO
=70 V
Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
Isolation Test Voltage from Double Molded
Package, 5300 VAC
RMS
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage .................................................6 V
Forward Current ...........................................60 mA
Surge Current .................................................1.5 A
Power Dissipation.......................................100 mW
Derate from 25
C ................................1.33 mW/
C
Detector
Collector-Emitter Reverse Voltage ...................70 V
Collector Current .......................................... 50 mA
Collector Current (t <1 ms)..........................100 mA
Power Dissipation.......................................150 mW
Derate from 25
C .................................... 2 mW/
C
Package
Isolation Test Voltage
(t=1 sec.) ......................................... 7500 VAC
PK
(t=1 min.) ....................................... 5300 VAC
RMS
Package Dissipation ILD620/GB............... 400 mW
Derate from 25
C ...............................5.33 mW/
C
Package Dissipation ILQ620/GB ..............500 mW
Derate from 25
C ...............................6.67 mW/
C
Creepage ............................................... 7 mm min.
Clearance............................................... 7 min min.
Isolation Resistance
V
IO
=500 V, T
A
=25
C ...............................
10
12
V
IO
=500 V, T
A
=100
C .............................
10
11
Storage Temperature................... 55
C to +150
C
Operating Temperature ................55
C to +100
C
Junction Temperature.................................... 100
C
Soldering Temperature
(2 mm from case bottom) .......................... 260
C
DESCRIPTION
The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocou-
plers that use GaAs IRLED emitters and high gain NPN silicon phototransis-
tors. These devices are constructed using over/under leadframe optical
coupling and double molded insulation technology. This assembly process
offers a withstand test voltage of 7500 VDC.
The ILD/Q621GB is well suited for CMOS interfacing given the CTR
CEsat
of
30% minimum at I
F
of 1 mA. High gain linear operation is guaranteed by a
minimum CTR
CE
of 100% at 5 mA. The ILD/Q621 has a guaranteed CTR
CE
of
50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain
in applications such as power supply feedback circuits, where constant DC
V
IO
voltages are present.
Dimensions in inches (mm)
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
4
Typ.
.100 (2.54)
Typ.
10
Typ.
3
9
.305 typ.
(7.75) typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Pin One I.D.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.268 (6.81)
.255 (6.48)
3
4
6
5
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
4
Typ.
.100 (2.54)
Typ.
10
Typ.
3
9
.305 typ.
(7.75) typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
1
2
8
7
Pin One I.D.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
1
2
3
4
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
DUAL CHANNEL
ILD621/621GB
QUAD CHANNEL
ILQ621/621GB
MULTI-CHANNEL PHOTOTRANSISTOR
OPTOCOUPLER
52
ILD/Q621/GB
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
F
1
1.15
1.3
V
I
F
=10 mA
Reverse Current
I
R
0.01
10
A
V
R
=6 V
Capacitance
C
O
40
pF
V
F
=0 V, f=1 MHz
Thermal Resistance, Junction to Lead
R
THJL
750
C/W
Detector
Capacitance
C
CE
6.8
pF
V
CE
=5 V, f=1 MHz
Collector-Emitter Leakage Current
I
CEO
10
100
nA
V
CE
=24 V
Collector-Emitter Leakage Current
I
CEO
2
50
A
T
A
=85
C, V
CE
=24 V
Thermal Resistance, Junction to Lead
R
THJL
500
C/W
Package Transfer Characteristics
Channel/Channel CTR Match
CTRX/CTRY
1 to 1
3 to 1
I
F
=5 mA, V
CE
=5 V
ILD/Q621
Saturated Current Transfer Ratio
CTR
CEsat
60
%
I
F
=1 mA, V
CE
=0.4 V
Current Transfer Ratio
CTR
CE
50
80
600
%
I
F
=5 mA, V
CE
=5 V
Collector-Emitter Saturation Voltage
V
CEsat
0.4
V
I
F
=8 mA, I
CE
=2.4 mA
ILD/Q621GB
Saturated Current Transfer Ratio
CTR
CEsat
30
%
I
F
=1 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emit-
ter)
CTR
CE
100
200
600
%
I
F
=5 mA, V
CE
=5 V
Collector-Emitter Saturation Voltage
V
CEsat
0.4
V
I
F
=8 mA, I
CE
=0.2 mA
Isolation and Insulation
Common Mode Rejection, Output High
CMH
5000
V/
s
V
CM
=50 V
P-P
, R
L
=1 k
, I
F
=0 mA
Common Mode Rejection, Output Low
CML
5000
V/
s
V
CM
=50 V
P-P
, R
L
=1 k
, I
F
=10
mA
Common Mode Coupling Capacitance
C
CM
0.01
pF
Package Capacitance
CI-O
0.8
pF
V
IO
=0 V, f=1 MHz
Insulation Resistance
R
S
10
12
V
IO
=500 V, T
A
=25
C
Channel to Channel Insulation
500
VAC
Figure 2. Non-saturated switching timing
Characteristic
Symbol
Typ.
Unit
Test
Condition
On Time
T
ON
3.0
s
I
F
=
10 mA
V
CC
=5 V
R
L
=75
50% of V
PP
Rise Time
t
R
20
s
Off Time
t
OFF
2.3
s
Fall Time
t
F
2.0
s
Propagation H-L
t
PHL
1.1
s
Propagation L-H
t
PLH
2.5
s
F=10 KHz,
DF=50 %
V
O
V
CC
=5 V
R
L
=75
I
F
=10 mA
Switching Times
Figure 1. Non-saturated switching timing
V
0
I
F
t
PHL
t
S
t
R
t
F
t
D
50%
t
PLH
53
ILD/Q621/GB
Figure 6. Maximum LED power dissipation
Figure 7. Forward voltage versus forward current
Figure 8. Collector-emitter current versus temperature
and LED current
--60 -40 -20 0 20 40 60 80 100
200
100
0
50
Ta - Ambient Temperature -
C
P
LED
- LED Power - mW
150
100
10
1
.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55
C
Ta = 25
C
Ta = 85
C
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
50
C
70
C
85
C
IF - LED Current - mA
Ice - Collector Current - mA
25
C
Figure 3. Saturated switching timing
Figure 4. Saturated switching timing
Figure 5. Maximum LED current versus ambient
temperature
Characteristic
Symbol
Typ.
Unit
Test
Condition
On Time
T
ON
4.3
s
I
F
=
10 mA
V
CC
=5 V
R
L
=1
V
TH
=1.5 V
Rise Time
t
R
2.8
s
Off Time
t
OFF
2.5
s
Fall Time
t
F
11
s
Propagation H-L
t
PHL
2.6
s
Propagation L-H
t
PLH
7.2
s
I
F
t
R
V
O
t
D
t
S
t
F
t
PHL
t
PLH
V
TH
=1.5 V
V
O
V
CC
=5 V
R
L
F=10 KHz,
DF=50%
I
F
=10 mA
--60 -40 -20 0 20 40 60 80 100
120
100
80
60
40
0
20
Ta - Ambient Temperature -
C
IF - Maximum LED Current - mA
TJ (MAX)=100
C
54
ILD/Q621/GB
Figure 13. Normalization factor for non-saturated and
saturated CTR T
A
=50
C versus If
Figure 14. Normalization factor for non-saturated and
saturated CTR T
A
=70
C versus If
Figure 15. Normalization factor for non-saturated and
saturated CTR T
A
=100
C versus If
Figure 16. Peak LED current versus pulse duration, Tau
100
10
1
.1
0.0
0.5
1.0
1.5
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25
C
Ta = 50
C
CTRce(sat) Vce = 0.4V
CTRNF - Normalized CTR Factor
IF - LED Current - mA
NCTRce(sat)
NCTRce
100
10
1
.1
0.0
0.5
1.0
1.5
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25
C
Ta = 70
C
CTRce(sat) Vce = 0.4V
CTRNF - Normalized CTR Factor
IF - LED Current - mA
NCTRce(sat)
NCTRce
100
10
1
.1
0.0
0.5
1.0
1.5
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25
C
Ta = 100
C
CTRce(sat) Vce = 0.4V
CTRNF - Normalized CTR Factor
IF - LED Current - mA
NCTRce(sat)
NCTRce
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
100
1000
10000
t - LED Pulse Duration - s
If(pk) - Peak LED Current - mA
.005
.05
.02
.01
.1
.2
.5
Duty Factor
t
DF = /t
Figure 9. Collector-emitter leakage versus temperature
Figure 10. Propagation delay versus collector load
resistor
Figure 11. Maximum detector power dissipation
Figure 12. Maximum collector current versus
collector voltage
100
80
60
40
20
0
-20
10
10
10
10
10
10
10
10
-2
-1
0
1
2
3
4
5
Ta - Ambient Temperature -
C
Iceo - Collector-Emitter - nA
TYPICAL
Vce = 10V
100
10
1
.1
1
10
100
1000
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - K
t
pLH
-
P
r
opa
ga
t
i
on D
e
l
a
y
-
s
t
p
H
L
-
P
r
opa
ga
t
i
on D
e
l
a
y
-
s
tpLH
tpHL
Ta = 25
C, IF =
10mA
Vcc = 5 V, Vth = 1.5
V
-60
-40
-20
0
20
40
60
80
100
0
50
100
150
200
Ta - Ambient Temperature -
C
P - Detector Power - mW
DET
.1
1
10
100
.1
1
10
100
1000
Vce - Collector-Emitter Voltage - V
Ice - Collector Current - mA
25
C
50
C
75
C
90
C
Rth = 500
C/W
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