TO-8-1
Semiconductor Group
1
02.97
Silicon Piezoresistive
Relative Pressure Sensor
KPY 33-R
Features
Low pressure and temperature hysteresis
Fast response
High sensitivity and linearity
Fatigue free monocrystaline silicon diaphragm
giving high load cycle stability
High long term stability
Metal Housing
Type and
Marking
Symbol
Pressure
Range
Unit
Ordering Code
KPY 33-R
P
0
...
P
N
0
...
0.1
bar
Q62705-K151
Pin Configuration
1
+V
OUT
2
+
V
IN
3
Not connected
4
Temperature sensor
5
Temperature sensor
6
Shielding, to be connected
to +
V
in
7
-
V
OUT
8
-
V
IN
KPY 33-R
Semiconductor Group
2
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Pressure overload
P
MAX
1.0
bar
Operating temperature range
T
A
-
40
... +
125
C
Storage temperature range
T
stg
-
50
... +
150
C
Supply voltage
V
IN
12
V
Electrical Characteristics
at
T
A
= 25 C and
V
IN
= 5 V, unless otherwise specified.
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Bridge resistance
R
B
4
-
8
k
Sensitivity
s
56.0
80.0
-
mV/Vbar
Output voltage
V
fin
28.0
40.0
-
mV
Offset voltage
P
=
P
0
V
0
-
25
-
+
25
mV
Linearity error (Best fit straight line)
P
=
P
0
...
P
N
F
L
-
0.2
0.5
%
V
fin
Pressure hysteresis
P
1
=
P
0
,
P
2
=
P
N
,
P
3
=
P
0
P
H
-
0.1
-
%
V
fin
Electrical Characteristics
at
T
1
= 25 C,
T
2
= 125 C,
T
3
= 25 C and
V
IN
= 5 V, unless otherwise specified.
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Temperature coefficient of
V
fin
TC
Vfin
-
0.19
-
-
0.10
%/K
Temperature coefficient
of
V
0
TC
V0
-
0.05
-
+ 0.05
%/K
Temperature coefficient of
R
B
TC
RB
-
+ 0.095
-
%/K
Temperature hysteresis of
V
0
;
V
fin
TH
-
0.7
0.1
+
0.7
% v.
V
fin
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