Semiconductor Group 1 07.96
The KSY 16 is an ion-implanted Hall sensor in a monocrystalline GaAs-material, built
into an SMT package (MW-6). It is outstanding for a high magnetic sensitivity and low
temperature coefficients. The 0.35
0.35 mm
2
chip is mounted onto a non-magnetic
leadframe. The active area is placed approx. 0.45 mm below the surface of the package.
Type Marking Ordering Code
KSY 16 s16 on request
Hall Sensor KSY 16
Dimensions in mm
Approx. weight 0.02 g
Pin Configuration
1, 4 Hall voltage terminals
3+, 2- Supply current terminals
Features
Hall sensor on Cu-leadframe
for SMT-technology, MW-6
package
High sensitivity
High temperature range
Small linearity error
Low offset voltage
Low TC of sensitivity
resistances
This Hall sensor combines
the avantages of non-
magnetic leadframe and SMT
capability
Typical applications
Rotation and position sensing
Current and power
measurement
Magnetic field measurement
Control of brushless DC
motors
Semiconductor Group
2
KSY 16
Maximum ratings
Characteristics (
T
A
= 25
C)
Connection of a Hall sensor with a power source
Since the voltage on the component must not exceed 10 V, the connection to the
constant current supply should only be done via a short circuit by-pass. The by-pass
circuit-breaker shall not be opened before turning on the power source. This is to avoid
damage to the Hall sensor due to power peaks.
Parameter
Symbol
Value
Unit
Operating temperature
T
A
40
...
+ 150
C
Storage temperature
T
stg
50
...
+ 160
C
Supply current
I
1
7
mA
Thermal conductivity
1)
G
thC
2.2
mW/K
Nominal supply current
I
1N
5
mA
Open-circuit sensitivity
K
B0
190
...
260
V/AT
Open-circuit Hall voltage
I
=
I
1N
,
B
= 0.1 T
V
20
95
...
130
mV
Ohmic offset voltage
I
=
I
1N
,
B
= 0 T
V
R20
20
mV
Linearity of Hall voltage
B
= 0
...
0.5 T
B
= 0
...
1 T
F
L
F
L
0.2
0.7
%
%
Input resistance
B
= 0 T
R
10
900
...
1200
Output resistance
B
= 0 T
R
20
900
...
1200
Temperature coefficient of the
open-circuit Hall voltage
I
1
=
I
1N
,
B
= 0.1 T
TC
V20
0.03
...
0.07
%/K
Temperature coefficient of the internal
resistance
B
= 0 T
TC
R10, R20
0.1
...
0.18
%/K
Change of offset voltage within the
temperature range
2)
V
R0
2
mV
1) Thermal conductivity chip-ambient when mounted on alumina ceramic 15 mm
17 mm
0.7 mm
2) AQL: 0.65
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